ROHM QS8K21 User Guide and Manual

Summary

The QS8K21 is a robust N-channel MOSFET optimized for switching and power handling in general-use electronic equipment. This comprehensive manual provides critical technical data, including absolute maximum ratings, detailed electrical characteristics (like turn-on/off times and on-resistance), thermal management parameters, and body diode specifications. It is engineered for applications ranging from audio visual systems to communication devices seeking dependable performance with low on-resistance and high power stability.

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ROHM QS8K21 User Guide and Manual - Page 1

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Page 1 Text Content

4V Drive Nch + Nch MOSFET QS8K21

Structure Dimensions (Unit : mm)

Silicon N-channel MOSFET TSMT8

Features 1) Low on-resistance.

2) High power package(TSMT8). 3) Low voltage drive(4V drive).

Abbreviated symbol : K21

Application Switching

Packaging specifications Inner circuit

Package Taping (8) (7) (6) (5)

Type Code TR

Basic ordering unit (pieces)

QS8K21

(1) Tr1 Source (2) Tr1 Gate

(3) Tr2 Source Absolute maximum ratings (Ta = 25C) (4) Tr2 Gate (5) Tr2 Drain

Parameter Symbol Limits Unit (6) Tr2 Drain ∗1 ESD PROTECTION DIODE (7) Tr1 Drain Drain-source voltage VDSS ∗2 BODY DIODE (8) Tr1 Drain

Gate-source voltage VGSS 20 Continuous ID 4

Drain current

Pulsed IDP 12

Source current Continuous Is

(Body Diode) *1

Pulsed Isp

1.5 W / TOTAL PDPower dissipation *2 1.25 W / ELEMENT

Channel temperature Tch C Range of storage temperature Tstg 55 to +150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.

Thermal resistance

Parameter Symbol Limits Unit

83.3 °C / W /TOTAL

Channel to Ambient Rth (ch-a)

°C / W /ELEMENT

*Mounted on a ceramic board.

www.rohm.com

1/5 2010.02 - Rev.A

Page Summary Contents For ROHM QS8K21 User Guide and Manual

Page 1 4V Drive Nch + Nch MOSFET QS8K21 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT8 Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive). Abbrevi...

Page 2 Data Sheet QS8K21 Electrical characteristics (Ta = 25C) <It is the same ratings for Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=20V, VDS=...

Page 3 Data Sheet QS8K21 IC IN -S -S IC IN -S -S IS (o ] IS (o ] Electrical characteristics curves IN [A Ta=25°C VDS= 10V VGS= 10V Pulsed Ta=25°C Pulsed VGS= 4.5V Pulsed VGS= 4.0V Ta= 125°C Ta= 75°C VGS= ...

Page 4 Data Sheet QS8K21 IC IN -S -S IT [p IS (O ] Ta=25°C Ta=25°C Pulsed VDD= 25V td(off) VGS=10V tf RG=10Ω ID= 2.0A Pulsed ID= 4.0A Ta=25°C VDD= 25V td(on) ID= 4.0A RG=10Ω tr Pulsed IT IN IM ns GATE-SOURC...

Page 5 Data Sheet QS8K21 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching time measurement circuit Fig.1-2 Switching waveforms VG...

Page 6 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	6
File Size	224.71 KB
Published	May 31, 2026

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Frequently Asked Questions

What is the maximum drain-source voltage (V_DSS) for this MOSFET?

The absolute maximum rating for Drain-source voltage (V_DSS) is 45 V.

How can I ensure proper operation when using the MOSFET?

Implement safety measures like derating, redundancy, and fire control. The product should not be used in applications requiring extremely high reliability, such as medical or aerospace machinery.

What is the optimal operating temperature range?

The channel temperature (Tch) range for operation is 150 °C, while the storage temperature (Tstg) ranges from -55 to +150 °C.

Does the product have a body diode capability?

Yes, the Body Diode offers a typical forward voltage at I = 4A and V = 0V of 1.2 V.

What are the on-state resistance parameters (R_DS(on))?

The static drain-source on-state resistance ranges from -48 to 67 mΩ when current is 4A at V=4.5V.