ROHM SP8K80 User Guide and Manual
Summary
A robust N-channel MOSFET designed for reliable high-power switching applications up to 500V. This component features built-in protection diodes and is optimized for optimal thermal performance in demanding circuit designs. The datasheet provides comprehensive technical information, including detailed electrical characteristics, dynamic on-state resistance curves, precise switching timing specifications, and measurements for engineers designing power conversion systems, motor drives, or industrial controls requiring high efficiency and reliability.
Page 1 Text Content
Data Sheet
10V Drive Nch MOSFET SP8K80 Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET SOP8
Features
(1) Tr1 Source
1) Built-in G-S protection diode.
(2) Tr1 Gate (3) Tr2 Source
2) Small surface mount package(SOP8).
(4) Tr2 Gate (5) Tr2 Drain (1) (3) (4)(2) (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain
Application Switching
Packaging specifications Inner circuit
Package Taping (8) (7) (6) (5)
Type Code TB Basic ordering unit (pieces) SP8K80
(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source
(4) Tr2 Gate ∗1 ∗1
(5) Tr2 Drain
(6) Tr2 Drain (1) (2) (3) (4)
(7) Tr1 Drain
1 ESD PROTECTION DIODE
(8) Tr1 Drain
2 BODY DIODE
Absolute maximum ratings (Ta = 25C)
Parameter Symbol Limits Unit
Drain-source voltage VDSS Gate-source voltage VGSS 30
Continuous ID *3 0.5
Drain current
Pulsed IDP *1 2
Source current Continuous IS *3 0.5
(Body Diode) Pulsed ISP *1
Avalanche current IAS *2 0.25 Avalanche energy EAS *2 0.017 m J Power dissipation PD *4
Channel temperature Tch 0.2 C
Range of storage temperature Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 L 500H, VDD=50V, RG=25, Tch=25°C
*3 Limited only by maximum channel temperature allowed.
*4 Mounted on a ceramic board.
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© 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.10 - Rev.A
Page Summary Contents For ROHM SP8K80 User Guide and Manual
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 7 |
| File Size | 1.15 MB |
| Published | June 06, 2026 |
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Frequently Asked Questions
What is the maximum continuous drain current (Id)?
The Pulsed Id limit allows for up to $\pm 2$ A, while the average continuous drain current ($I_D$) is rated at $\pm 0.5$ A.
How does temperature affect resistance and threshold voltage?
Static $R_{DS(on)}$ increases as channel temperature rises (See Fig.6). The Gate Threshold Voltage ($V_{GS(th)}$) varies with temperature, typically showing a dependency outlined in Fig.4.
Which mounting surface is required for thermal calculations?
Thermal resistance ratings are specified assuming the device is mounted on a ceramic board.