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ROHM US5U3 User Guide and Manual

Summary

The US5U3 is an advanced semiconductor component integrating both an N-channel MOSFET and a Schottky barrier diode within a single package (TUMT5). Designed for high-speed switching applications, it offers superior performance with low on-resistance, robust ESD protection, and ultra-low voltage drive capabilities (2.5V). This manual provides comprehensive technical data, including detailed electrical characteristics, absolute maximum ratings, switching curves, and transfer graphs, enabling engineers to accurately select and optimize the transistor for demanding power control circuits.

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US5U3

Transistors

2.5V Drive Nch+SBD MOSFET US5U3 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET /

TUMT5

Schottky barrier diode

Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode.

Abbreviated symbol : U03

Applications Switching

Package specifications Inner circuit

Package Taping

Type Code TR

Basic ordering unit (pieces)

0. 2M ax

US5U3

∗1 (1)Gate

(2)Source (1) (2) (3) (3)Anode ∗1 ESD protection diode (4)Cathode ∗2 Body diode (5)Drain

Absolute maximum ratings (Ta=25°C) <MOSFET>

Parameter Symbol Limits Unit

Drain-source voltage VVDSS Gate-source voltage VVGSS Continuous ±1.5 AID

Drain current

Pulsed ±6.0 AIDP Source current Continuous 0.6 AIS

(Body diode) Pulsed ∗1 6.0 AISP Power dissipation ∗2PD W / ELEMENT0.7

Channel temperature °CTch

∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board

Parameter Symbol Limits Unit

Repetitive peak reverse voltage VVRM Reverse voltage VVR

Forward current 0.7 AIF

Forward current surge peak ∗1 3.0 AIFSM Power dissipation ∗2 0.5 W / ELEMENTPD

Junction temperature Tj °C ∗1 60Hz 1cycle ∗2 Mounted on ceramic board

Rev.B 1/3

Page Summary Contents For ROHM US5U3 User Guide and Manual

Page 1 US5U3 Transistors 2.5V Drive Nch+SBD MOSFET US5U3 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / TUMT5 Schottky barrier diode Features 1) Nch MOSFET and schottky barrier diode are put in ...
Page 2 US5U3 Transistors &lt;MOSFET and Di&gt; Parameter Symbol Limits Unit Total power dissipation ∗1 1.0 W / TOTALPD Range of storage temperature −55 to +150 °CTstg ∗1 Mounted on a ceramic board Electrical...
Page 3 IT p F IC IN -S US5U3 -S IS on ) ( IN ID Transistors Electrical characteristics curves Ta=25°C Ta=25°C Ta=25°C f=1MHz VDD=15V VDD=15V VGS=4.5V VGS=0V ID=1.5A RG=10Ω RG=10Ω Pulsed Pulsed Ciss tf td(off...
Page 4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...