ROHM VT6T1 User Guide and Manual

Power management (dual transistors) VT6T1 Structure Dimensions (Unit : mm) PNP silicon epitaxial planar transistor

Features 0 ~ 0.05 Very small package with two transistors.

Applications

Switch, LED driver

Abbreviated symbol : T1

Each lead has same dimensions. UNIT : mm

Packaging specifications Inner circuit

Package Taping

Code T2R

(1) Emitter (Tr1)

Basic ordering

(2) Base (Tr1)

Tr2Tr1

Type unit (pieces) (3) Collector (Tr2)

(4) Emitter (Tr2)

VT6T1 (5) Base (Tr2)

(1) (3)(2) (6) Collector (Tr1)

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit

Collector-base voltage VCBO −20 Collector-emitter voltage VCEO −20 Emitter-base voltage VEBO −5 IC m A−200

Collector current

ICP m A−400 0. .1 0. .1

Total m W

∗2 Power dissipation PD

Element m W

Junction temperature Tj °C

Storage temperature Tstg −55 to +150 °C

∗1 Pw=1m S Single pulse ∗2 Each terminal mounted on a recommended land

Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-emitter breakdown voltage BVCEO −20 IC= −1m A

Collector-base breakdown voltage BVCBO −20 IC= −50µA

Emitter-base breakdown voltage BVEBO −5 IE= −50µA Collector cut-off current ICBO −0.1 µA VCB= −20V Emitter cut-off current IEBO −0.1 µA VEB= −5V Collector-emitter saturation voltage VCE(sat) −0.12 −0.30 IC= −100m A, IB= −10m A

DC current gain h FE VCE= −2V, IC= −1m A Transition frequency f T MHz VCE= −10V, IE=10m A, f=100MHz Cob p F VCB= −10V, IE=0A, f=1MHz Output capacitance

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