ROHM RW1E025RP User Guide and Manual

Summary

Discover the RW1E025RP, a high-performance Silicon P-channel MOSFET designed for efficient power switching applications. This comprehensive manual provides critical technical data, including absolute maximum ratings, static/dynamic electrical characteristics, and thermal coefficients. It covers essential details like on-state resistance, gate charges, capacitance values, and detailed switching waveforms. Ideal for electronics engineers requiring reliable components for demanding power control circuits.

📄 Preview ‹ PAGE OF 7 ›

‹

ROHM RW1E025RP User Guide and Manual - Page 1

›

Page 1 Text Content

Data Sheet

4V Drive Pch MOSFET RW1E025RP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET

WEMT6

Features (6) (5) (4)

1) Low On-resistance. 2) Small high power package.

3) Low voltage drive.(4V)

Abbreviated symbol : UT

Application Switching

Packaging specifications Inner circuit

Package Taping (6) (5) (4)

Type Code T2CR

Basic ordering unit (pieces) ∗2

RW1E025RP

(1) Drain Absolute maximum ratings (Ta = 25C) (2) Drain (3) Gate

Parameter Symbol Limits Unit (1) (2) (3)

(4) Source (5) Drain ∗1 ESD PROTECTION DIODE

Drain-source voltage VDSS 30

(6) Drain ∗2 BODY DIODE

Gate-source voltage VGSS 20 Continuous ID 2.5

Drain current

Pulsed IDP *1 10 Source current Continuous IS 0.5 (Body Diode) Pulsed ISP *1 10 Power dissipation PD *2 0.7

Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.

Thermal resistance

Parameter Symbol Limits Unit

Channel to Ambient Rth (ch-a) C / W *Mounted on a ceramic board.

www.rohm.com

Page Summary Contents For ROHM RW1E025RP User Guide and Manual

Page 1 Data Sheet 4V Drive Pch MOSFET RW1E025RP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET WEMT6 Features (6) (5) (4) 1) Low On-resistance. 2) Small high power package. 3) Low voltage drive...

Page 2 Data Sheet RW1E025RP Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=20V, VDS=0V Drain-source breakdown voltage V(BR)DSS 3...

Page 3 Data Sheet RW1E025RP Electrical characteristic curves (Ta=25C) ta ti ra in -S rc -S ta te is ta ta ti ra in -S rc -S ta te is ta ra in rr Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Outpu...

Page 4 Data Sheet RW1E025RP it in im rc rr rw rd ra fe it ta Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics VDS=-10V VDS=-10V pulsed pulsed Ta=125°C Ta=75°C Ta=25°...

Page 5 Data Sheet RW1E025RP Fig.13 Typical Capacitance vs. Drain-Source Voltage Ta=25°C f=1MHz VGS=0V Crss Coss Drain-Source Voltage : -VDS [V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 201...

Page 6 Data Sheet RW1E025RP Measurement circuits Pulse Width VGS ID VGS VDS 10% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms VDS Qg IG(Const.) D.U.T. Qg...

Page 7 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	7
File Size	1.11 MB
Published	June 04, 2026

28 views

Enter the captcha to get the download link:

Frequently Asked Questions

Should I implement additional protection when using this component?

Yes, this product might cause chip aging and breakdown in large electrified environments, so implementing an ESD protection circuit is advisable.

What mounting surface is required to manage thermal loads?

The device must be mounted on a ceramic board. The thermal resistance ($R_{th(c-a)}$) is listed based on this mounting condition.

What is the maximum allowable drain channel temperature?

The absolute maximum rating for the drain channel temperature ($T_{ch}$) is 150°C.