ROHM DTB543XE DTB543XM User Guide Manual
Summary
Engineered for reliable signal integrity, this bipolar transistor features advanced low VCE(sat) performance and integrated bias resistors. This design dramatically simplifies circuit creation by providing immediate functionality without requiring external components or worrying about complex parasitic effects. Ideal for hardware designers building robust interface, inverter, or driving stages in demanding electronic applications, the manual provides full electrical specifications, application circuits, and packaging guidelines necessary for precise integration into your product development.
Page 1 Text Content
DTB543XE / DTB543XM
Transistors
-500m A / -12V Low VCE (sat) Digital transistors (with built-in resistors) DTB543XE / DTB543XM Applications External dimensions (Unit : mm) Inverter, Interface, Driver
DTB543XE
Feature
1) VCE (sat) is lower than conventional products.
2) Built-in bias resistors enable the configuration of an 0.2 0.2
0.15 (1) GND
inverter circuit without connecting external input (2) IN
EMT3 1.0
(3) OUT
resistors (see equivalent circuit). JEITA No. (SC-75A) JEDEC No. <SOT-416>
Each lead has same dimensions
3) The bias resistors consist of thin-film resistors with
Abbreviated symbol : X33
complete isolation to allow positive biasing of the input. They also have the advantage of almost DTB543XM completely eliminating parasitic effects. 1.2
4) Only the on / off conditions need to be set for (3)
operation, making the device design easy.
0.13 (1) IN
(2) GND
Structure (3) OUT
VMT3 0. 0. 0.
PNP epitaxial plannar silicon transistor Each lead has same dimensions
(Resistor built-in type) Abbreviated symbol : X33
0. 1M in
Absolute maximum ratings (Ta=25°C) Packaging specifications
Package EMT3 VMT3
Limits
Parameter Symbol Unit Packaging type Taping Taping
DTB543XE DTB543XM
Code TL T2L
Supply voltage VCC −12
Basic ordering
Input voltage VIN −12 to +7 unit (pieces)
Part No.
Collector current ∗1 IC (max) m A
DTB543XE
Power dissipation PD m W DTB543XM Junction temperature Tj Storage temperature Tstg −55 to +150
∗1 Characteristics of built-in transistor. ∗2 Each terminal mounted on a recommended land.
Electrical characteristics (Ta=25°C) Equivalent circuit
Parameter Symbol Min. Typ. Max. Unit Conditions
VI(off) −0.3 VCC= −5V, IO= −100µA
Input voltage R1 OUT
VI(on) −2.5 VO= −0.3V, IO= −20m A IN
Output voltage VO(on) −70 −300 m V IO/II= −100m A / −5m A R2
Input current II −1.4 m A VI= −5V GND(+)
Output current IO(off) −500 n A VCC= −12V, VI=0V
IN OUT
DC current gain GI VO= −2V, IO= −100m A
Transition frequency f T MHz VCE= −10V, IE=5m A, f=100MHz GND(+)
Input resistance R1 3.29 4.7 6.11 kΩ Resistance ratio R2/R1 1.7 2.1 2.6
∗ Characteristics of built-in transistor.
Page Summary Contents For ROHM DTB543XE DTB543XM User Guide Manual
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 2 |
| File Size | 58.42 KB |
| Published | June 01, 2026 |
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Frequently Asked Questions
What is the maximum collector current (IC) rating?
The maximum collector current (IC) is -500 mA.
How are these transistors configured for use?
They can be used in applications like inverters, interfaces, or drivers.
Is external input needed to configure an inverter circuit?
No, they feature built-in bias resistors enabling configuration without connecting external inputs.
What is the recommended junction temperature range?
The device has a listed Junction temperature (Tj) of 150 °C.