ROHM 2SD1782K User Manual

Summary

This technical manual provides comprehensive specifications for the 2SD1782K NPN power transistor, an ideal component for robust electrical circuit design. Featuring a high 80V maximum collector-emitter voltage and low saturation voltage (VCEsat=0.2V typ.), this solid-state component is designed to provide reliable current switching up to 0.5A. Engineers can utilize the detailed data sheets, including full electrical characteristics, operating curves, and absolute ratings, to integrate the transistor into diverse electronic applications such as communication or audio equipment circuits.

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2SD1782K

Transistors

Power Transistor (80V, 0.5A) 2SD1782K

Features External dimensions (Unit : mm)

1) Low VCE(sat).

VCE(sat) =0.2V(Typ.) +0.2 1.1 1.9±0.2 −0.1

(IC / IB=0.5 A / 50m A) 0.95 0.95 0.8±0.1

2) High VCEO, VCEO=80V

3) Complements the 2SB1198K. 0~0.1

Structure

All terminals have same dimensions (1) Emitter

Epitaxial planar type

ROHM : SMT3 (2) Base NPN silicon transistor EIAJ : SC-59 Abbreviated symbol : AJ∗

(3) Collector

∗ Denotes h FE

Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO Collector-emitter voltage VCEO Emitter-base voltage VEBO

Collector current 0.5IC Collector power dissipation PC 0.2 Junction temperature Tj °C Storage temperature Tstg −55 to +150 °C

Rev.A 1/3

Page Summary Contents For ROHM 2SD1782K User Manual

Page 1 2SD1782K Transistors Power Transistor (80V, 0.5A) 2SD1782K Features External dimensions (Unit : mm) 1) Low VCE(sat). VCE(sat) =0.2V(Typ.) +0.2 1.1 1.9±0.2 −0.1 (IC / IB=0.5 A / 50m A) 0.95 0.95 0.8±0....

Page 2 2SD1782K LL IC (m Transistors Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO IC=50µA Collector-emitter breakdown voltage BV...

Page 3 2SD1782K LL TO TU TI LT (s at ) ( LL TO TU TI LT (s at ) ( Transistors Ta=25°C l C/l B=10 l C/l B=20 Ta=100°C Ta=100°C 25°C 25°C IC/IB=50 IT IO f T (M z) LL TO TU TI LT (s at ) ( COLLECTOR CURRENT : I...

Page 4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand	ROHM
Pages	4
File Size	75.74 KB
Published	June 15, 2026

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Frequently Asked Questions

What is the typical collector-emitter saturation voltage VCE(sat)?

The datasheet lists a low VCE(sat) of 0.2V (Typ.) when IC/IB=0.5 A / 50mA.

Is this transistor suitable for life-critical equipment like aerospace machinery?

No, if the device is intended for extremely high reliability or where malfunction endangers human life, you must consult a sales representative before use.

What are the absolute maximum ratings for voltage and power dissipation?

The absolute limits include VCB(O) up to 80V, VCEO up to 80V, and PC (Collector power dissipation) up to 0.2W.

Does this transistor complement other components?

Yes, the structure notes that it complements the 2SB1198K.