ROHM MMST4403 datasheet specifications manual user guide

SST4403 / MMST4403

Transistors

PNP Medium Power Transistor (Switching) SST4403 / MMST4403

Features Dimensions (Unit : mm)

1) BVCEO = −40V (Min.) ; at IC= −1m A

SST4403

2) Complements the SST4401 / MMST4401

(1) Emitter Package, marking, and packaging specifications (2) Base ROHM : SST3 (3) Collector

Part No. SST4403 MMST4403 Packaging type SST3 SMT3

MMST4403

Marking R2T R2T

Code T116 T146

Basic ordering unit (pieces)

(1) Emitter

ROHM : SMT3 (2) Base EIAJ : SC-59 (3) Collector

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit Collector-base voltage VCBO −40

Collector-emitter voltage VCEO −40 Emitter-base voltage VEBO −6 Collector current IC −0.6

Collector power

dissipation

Junction temperature Tj ˚C Storage temperature Tstg −55 to +150 ˚C

∗ Mounted on a 7 5 0.6mm CERAMIC SUBSTRATE+

Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage BVCBO −40 IC= −100µA

Collector-emitter breakdown voltage BVCEO −40 IC= −1m A Emitter-base breakdown voltage BVEBO −5 IE= −100µA Collector cutoff current ICBO −0.1 µA VCB= −35V Emitter cutoff current IEBO −0.1 µA VEB= −5V

−0.4 IC/IB= −150m A/ −15m A

Collector-emitter saturation voltage VCE(sat)

−0.75 IC/IB= −500m A/ −50m A

−0.75 −0.95 IC/IB= −150m A/ −15m A

Base-emitter saturation voltage VBE(sat)

−1.3 IC/IB= −500m A/ −50m A

VCE= −1V, IC= −0.1m A VCE= −1V, IC= −1m A DC current transfer ratio h FE VCE= −1V, IC= −10m A VCE= −1V, IC= −150m A VCE= −2V, IC= −500m A

Transition frequency f T MHz VCE= −10V, IE=20m A, f=100MHz Collector output capacitance Cob 8.5 p F VCB= −10V, f=100k Hz Emitter input capacitance Cib p F VEB= −0.5V, f=100k Hz Delay time td ns VCC= −30V, VEB(OFF)= −2V, IC= −150m A, IB1= −15m A

tr ns VCC= −30V, VEB(OFF)= −2V, IC= −150m A, IB1= −15m ARise time

Storage time tstg ns VCC= −30V, IC= −150m A, IB1= −IB2= −15m A

tf ns VCC= −30V, IC= −150m A, IB1= −IB2= −15m A Fall time

Rev.C 1/3