ROHM DTB543EE DTB543EM User Guide Manual

DTB543EE / DTB543EM

Transistors

-500m A / -12V Low VCE (sat) Digital transistors (with built-in resistors) DTB543EE / DTB543EM Applications Dimensions (Unit : mm) Inverter, Interface, Driver

DTB543EE

Feature

1) VCE (sat) is lower than conventional products.

2) Built-in bias resistors enable the configuration of an 0.2 0.2

0.15 (1) GND

inverter circuit without connecting external input (2) IN

EMT3 1.0

(3) OUT

resistors (see equivalent circuit). JEITA No. (SC-75A) JEDEC No. <SOT-416> Each lead has same dimensions

3) The bias resistors consist of thin-film resistors with

Abbreviated symbol : X13

complete isolation to allow positive biasing of the

input. They also have the advantage of almost DTB543EM

completely eliminating parasitic effects.

0.32 4) Only the on / off conditions need to be set for (3)

operation, making the device design easy. (2)(1) 0.22

0.13 (1) IN

(2) GND

(3) OUT

Structure VMT3

Each lead has same dimensions

PNP epitaxial plannar silicon transistor 0.

Abbreviated symbol : X13 0. 0. 0.

(Resistor built-in type)

0. 1M in

Absolute maximum ratings (Ta=25°C) Packaging specifications

Package EMT3 VMT3

Limits

Parameter Symbol Unit

Packaging type Taping Taping

DTB543EE DTB543EM

Code TL T2L

Supply voltage VCC −12

Input voltage VIN −12 to +10 Basic ordering Part No. unit (pieces)

Collector current ∗1 IC (max) m A

DTB543EE

Power dissipation ∗2 PD m W

DTB543EM

Junction temperature Tj

Storage temperature Tstg −55 to +150

∗1 Characteristics of built-in transistor. ∗2 Each terminal mounted on a recommended land.

Electrical characteristics (Ta=25°C) Equivalent circuit

Parameter Symbol Min. Typ. Max. Unit Conditions

VI(off) −0.5 VCC= −5V, IO= −100µA

Input voltage R1 OUT

VI(on) −2.5 VO= −0.3V, IO= −20m A IN

Output voltage VO(on) −60 −300 m V IO/II= −100m A / −5m A R2

Input current II −1.4 m A VI= −5V GND(+) Output current IO(off) −0.5 µA VCC= −12V, VI=0V

DC current gain GI VO= −2V, IO= −100m A IN OUT

Transition frequency f T MHz VCE= −10V, IE=5m A, f=100MHz

GND(+)

Input resistance R1 3.29 4.7 6.11 kΩ Resistance ratio R2/R1 0.8 1.0 1.2

∗ Characteristics of built-in transistor.

Rev.A 1/2