ROHM 2SAR523M 2SAR523EB 2SAR523UB User Manual
Summary
This datasheet provides comprehensive technical specifications for a PNP silicon epitaxial planar transistor series designed for switching and driver applications. It allows engineers to determine suitability for circuits such as EMTF Switches and LED drivers by detailing essential parameters like breakdown voltage (VCEO), collector current, transition frequency (fT), and saturation voltage. The manual includes absolute maximum ratings, detailed electrical performance curves across various temperatures, and packaging information, making it an indispensable resource for electronics design and component selection in mass production equipment.
Page 1 Text Content
General purpose transistor(-50V,-0.1A) 2SAR523M/2SAR523EB/2SAR523UB Structure Dimensions (Unit : mm) PNP silicon epitaxial planar transistor
Features Complemets the 2SCR523M/2SCR523EB/2SCR523UB.
Abbreviated symbol : PB
Applications
EMT3F
Switch, LED driver
Packaging specifications
Package VMT3 EMT3F UMT3F
Abbreviated symbol : PB
Packaging Type Taping Taping Taping
Type UMT3F
Code T2L TL TL
Basic ordering
unit (pieces) 2.
2SAR523M
2SAR523EB 0.65 0.65 0.13
2SAR523UB
Abbreviated symbol : PB
Absolute maximum ratings (Ta=25C) inner circuit 0. 0.
Parameter Symbol Limits Unit (3)
Collector-base voltage VCBO −50 Collector-emitter voltage VCEO −50 (1) Emitter-base voltage VEBO −5
(1) Base (2) Emitter
IC m A−100
(3) Collector
Collector current
∗1 ICP m A−200
2SAR523M,2SAR523EB m W
Power ∗2 PD
dissipation
2SAR523UB m W
Junction temperature Tj °C
Storage temperature Tstg −55 to +150 °C
∗1 Pw=1m S Single pulse ∗2 Each terminal mounted on a recommended land
Electrical characteristics (Ta=25C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-emitter breakdown voltage BVCEO −50 IC= −1m A
Collector-base breakdown voltage BVCBO −50 IC= −50μA
Emitter-base breakdown voltage BVEBO −5 IE= −50μA Collector cut-off current ICBO −0.1 μA VCB= −50V Emitter cut-off current IEBO −0.1 μA VEB= −5V Collector-emitter saturation voltage VCE(sat) −0.15 −0.40 IC= −50m A, IB= −5m A
DC current gain h FE VCE= −6V, IC= −1m A Transition frequency f T MHz VCE= −10V, IE=10m A, f=100MHz Cob p F VCB= −10V, IE=0A, f=1MHz Output capacitance
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1/2 2010.09 - Rev.A
○c 2009 ROHM Co., Ltd. All rights reserved.
Page Summary Contents For ROHM 2SAR523M 2SAR523EB 2SAR523UB User Manual
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 3 |
| File Size | 166.62 KB |
| Published | June 05, 2026 |
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Frequently Asked Questions
What is the collector-emitter voltage rating (VCEO)?
The VCEO is rated at -50 V in absolute maximum ratings.
What is the transition frequency (fT) of this component?
The Transition frequency ($f_T$) is specified as -300 MHz.
How much power can the 2SAR523M/2SAR523EB dissipate?
The $P_D$ dissipation for the 2SAR523M and 2SAR523EB is 150 mW.
What handling consideration is noted for the terminals?
Each terminal must be mounted on a recommended land area.