Panasonic 2SK601 Silicon N-Channel MOS FET User's Manual

查询2SK0601供应商 Silicon MOS FETs (Small Signal)

2SK601 Silicon N-Channel MOS FET For switching

unit: mm

Features 4.5±0.1 1.5±0.1

Low ON-resistance RDS(on) High-speed switching Allowing to be driven directly by CMOS and TTL

Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.

0.5±0.08 Absolute Maximum Ratings (Ta = 25°C) 1.5±0.1

Parameter Symbol Ratings Unit

Drain to Source voltage VDS Gate to Source voltage VGSO

1: Gate

marking

Drain current ID ±0.5 2: Drain 3: Source

Max drain current IDP ±1

EIAJ: SC-62

Allowable power dissipation PD Mini-Power Type Package (3-pin) 2. 6± 0.

Channel temperature Tch °C

Marking Symbol: O

Storage temperature Tstg −55 to +150 °C

* PC board:

Copper foil of the drain portion should have a area of 1cm2 or more and the board thickness should be 1.7mm.

0. Electrical Characteristics (Ta = 25°C) 1. 0+ –0 .2 0. 4m ax

Parameter Symbol Conditions min typ max Unit

Drain to Source cut-off current IDSS VDS = 60V, VGS = 0 µA

Gate to Source leakage current IGSS VGS = 20V, VDS = 0 0.1 µA

Drain to Source breakdown voltage VDSS IDS = 100µA, VGS = 0 Gate threshold voltage Vth ID = 1m A, VDS = VGS 1.5 3.5

Drain to Source ON-resistance RDS(on) ID = 0.5A, VGS = 10V Forward transfer admittance | Yfs | ID = 0.2A, VDS = 15V, f = 1k Hz m S Input capacitance (Common Source) Ciss p F Output capacitance (Common Source) Coss VDS = 10V, VGS = 0, f = 1MHz p F Reverse transfer capacitance (Common Source) Crss p F

Turn-on time ton ns

Turn-off time toff ns *1 Pulse measurement *2 ton, toff measurement circuit

Vout 10%

Vin Vin

Vin = 10V

90%Vout Vout VDD = 30V

f = 1MHZ

ton toff