Panasonic 2SK123 Silicon N-Channel Junction FET Specifications and User Guide

查询2SK123供应商 Silicon Junction FETs (Small Signal)

2SK123 Silicon N-Channel Junction FET For impedance conversion in low frequency

unit: mm

For electret capacitor microphone

Features High mutual conductance gm Low noise voltage of NV

Absolute Maximum Ratings (Ta = 25°C) Parameter Symbol Ratings Unit Drain to Source voltage VDSO Drain to Gate voltage VDGO

1: Drain

Drain to Source current IDSO m A

2: Source

Drain to Gate current IDGO m A 3: Gate

Mini Flat Package (3-pin) .1 .1 0. 4+0 −0 .0 0. 4+0 −0 .0

Gate to Source current IGSO m A

Allowable power dissipation PD m W

Marking Symbol: 1H

Note: For the forming type, (Y) is indicated after the part No. 0. 0.

Operating ambient temperature Topr −20 to +80 °C

Storage temperature Tstg −55 to +150 °C

Electrical Characteristics (Ta = 25°C)

0. 1. .2 .2 Parameter Symbol Conditions min typ max Unit 1. 1+0 −0 .1 2. 9+0 −0 .0

Current consumption ID VD = 4.5V, CO = 10p F, RD = 2.2kΩ ± 1% µA Drain to Source cut-off current IDSS VDS = 4.5V, VGS = 0 µA Mutual conductance gm VD = 4.5V, VGS = 0, f = 1k Hz 0.7 1.6 m S

VD = 4.5V, RD = 2.2kΩ ± 1%

Noise figure NV µV

CO = 10p F, A-curve VD = 4.5V, RD = 2.2kΩ ± 1%

GV1 −3 d B

CO = 10p F, e G = 10m V, f = 1k Hz VD = 12V, RD = 2.2kΩ ± 1%

Voltage gain GV2 3.3 d B

CO = 10p F, e G = 10m V, f = 1k Hz VD = 1.5V, RD = 2.2kΩ ± 1%

GV3 −4.5 − 0.3 d B

CO = 10p F, e G = 10m V, f = 1k Hz

∆|GV2 − GV1| +3.5 d B

Voltage gain difference

∆|GV1 − GV3| +3.5 d B