Panasonic 2SK1228 Silicon N-Channel MOS FET User Manual

查询2SK1228供应商 Silicon MOS FETs (Small Signal)

2SK1228 Silicon N-Channel MOS FET 0µ For switching

unit: mm

Features High-speed switching Wide frequency band Incorporating a built-in gate protection-diode Allowing 2.5V drive

Absolute Maximum Ratings (Ta = 25°C) Parameter Symbol Ratings Unit Drain to Source voltage VDS

0.1 to 0.3

Gate to Source voltage VGSO

Drain current ID m A Max drain current IDP m A 1: Gate JEDEC: TO-236

2: Source EIAJ: SC-59

Allowable power dissipation PD m W 0. 3: Drain Mini Type Package (3-pin) 2. –0 .0

Channel temperature Tch °C 1. –0 .1 9± 0.

Marking Symbol: 4V 0.

Storage temperature Tstg −55 to +150 °C 0. 951. 0.

Electrical Characteristics (Ta = 25°C) Parameter Symbol Conditions min typ max Unit

to .1

Drain to Source cut-off current IDSS VDS = 20V, VGS = 0 µA

Gate to Source leakage current IGSS VGS = 10V, VDS = 0 µA

Drain to Source breakdown voltage VDSS ID = 10µA, VGS = 0 Gate threshold voltage Vth ID = 100µA, VDS = 5V 0.5 0.8 1.1

Drain to Source ON-resistance RDS(on) ID = 10m A, VGS = 2.5V Forward transfer admittance | Yfs | ID = 10m A, VDS = 5V, f = 1k Hz m S Input capacitance (Common Source) Ciss 4.5 p F Output capacitance (Common Source) Coss VDS = 5V, VGS = 0, f = 1MHz 4.1 p F Reverse transfer capacitance (Common Source) Crss 1.2 p F

Turn-on time ton VDD = 5V, VGS = 0 to 2.5V, RL = 470Ω 0.2 µs

Turn-off time toff VDD = 5V, VGS = 2.5 to 0V, RL = 470Ω 0.2 µs

*1 Pulse measurement

*2 ton, toff measurement circuit

Vout 470Ω

VGS = 2.5V

VDD = 5V Vout

ton toff