HITACHI 2SJ244 Silicon P-Channel MOS FET Data Sheet

Summary

This power MOSFET is engineered for high-speed efficiency in switching and motor driving circuits. Its robust design makes it ideal for applications such as camera or VTR motor drives, general power switches, and solenoid actuation systems requiring low voltage operation. The accompanying manual provides comprehensive technical specifications, including absolute maximum ratings, detailed thermal analysis curves, and crucial electrical parameters like on-resistance and switching times. It is essential documentation for electronics engineers and designers specifying reliable, high-performance components for demanding electromechanical applications.

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查询2SJ244供应商

2SJ244 Silicon P-Channel MOS FET

Application

High speed power switching

Low voltage operation

Features

• Very Low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.

Outline

1. Gate 2. Drain 3. Source 4. Drain

Page Summary Contents For HITACHI 2SJ244 Silicon P-Channel MOS FET Data Sheet

Page 1 查询2SJ244供应商 2SJ244 Silicon P-Channel MOS FET Application High speed power switching Low voltage operation Features • Very Low on-resistance • High speed switching • Suitable for camera or VTR motor dr...

Page 2 2SJ244 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –12 Gate to source voltage VGSS ±7 Drain current ID ±2 Drain peak current ID(pulse)* ±4 Channel dissip...

Page 3 2SJ244 ra in ur re nt ha nn el ow er is si pa tio ch Maximum Safe Operation Area on th al um in ce ra ic oa rd -10 Operation in this Area Maximum Channel Power Dissipation Curve is limited by RDS(on) ...

Page 4 2SJ244 ra in to ou rc at ur at io ol ta ge or ar ra ns fe dm itt an ce |Y fs Drain to Source on State Resistance vs. Forward Transfer Admittance vs. Drain Current Drain Current Pulse TestΩ V = -5 VDS ...

Page 5 2SJ244 ra in to ou rc ol ta ge ev er se ec ov er im rr Reverse Recovery Time vs. Switching Time vs. Drain Current Reverse Drain Current V = - 4 V, V = - 10 V GS DD di/dt = 10 A/µs PW = 2 µs, Duty Cycl...

Page 6 2SJ244 Reverse Drain Current vs. Source to Drain Voltage -4 Pulse Test ev er se ra in ur re nt V = 0GS -0.5 -1.0 -1.5 -2.0 Source to Drain Voltage V ( V )SD

Page 7 0. in 2. 0. 0. 4. ax Unit: mm 1.8 Max (1.5) 0.44 Max 0.53 Max 0.44 Max0.48 Max Hitachi Code UPAK JEDEC EIAJ Conforms Weight (reference value) 0.050 g

Page 8 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained i...

Manual Details

Brand	Hitachi
Pages	8
File Size	41.30 KB
Published	June 03, 2026

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Frequently Asked Questions

What is the maximum drain peak current allowed?

The absolute maximum rating for drain peak current (ID(pulse)) is -4A.

How does dissipation limit relate to ambient temperature?

Channel power dissipation (Pch) is limited by Rds(on) and performance chart, with specific operating modes defined for the alumina ceramic board.

What are the relevant switching delay times?

The turn-on delay time (t(d(on))) is 365 ns, and the turn-off delay time (t(d(off))) is 1450 ns.