HITACHI 2SJ248 Silicon P-Channel MOS FET Data Sheet
Summary
The 2SJ248 is a high-performance Silicon P-Channel MOS FET engineered for reliable, high-speed power switching applications. Featuring low on-resistance and minimal drive current, it is ideally suited for robust designs like DC-DC converters and switching regulators. This comprehensive technical manual provides detailed specifications, including absolute maximum ratings, full electrical characteristics tables, and thermal derating curves. It serves as an essential resource for electrical engineers and design professionals integrating demanding power electronics into sophisticated systems.
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2SJ248 Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter
Outline
TO-220FM
1. Gate 2. Drain 3. Source
Page Summary Contents For HITACHI 2SJ248 Silicon P-Channel MOS FET Data Sheet
Manual Details
| Brand | Hitachi |
|---|---|
| Pages | 6 |
| File Size | 28.89 KB |
| Published | June 03, 2026 |
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