HITACHI 2SJ172 Silicon P-Channel MOS FET Data Sheet

Summary

This comprehensive datasheet is perfect for electrical engineers and circuit designers requiring high-performance power components. It details the 2SJ172 Silicon P-Channel MOS FET, a robust switch known for its low on-resistance and high-speed switching capabilities. The manual provides exhaustive technical specifications, including maximum ratings, detailed electrical characteristics, and graphs covering various operational modes (e.g., DC operation, pulsing). Ideal for applications such as motor drives, DC-DC converters, and general power switching systems requiring reliability and efficiency.

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查询2SJ172供应商

2SJ172 Silicon P-Channel MOS FET

November 1996

Application

High speed power switching

Features

• Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Outline

TO-220AB

1. Gate 2. Drain (Flange) 3. Source

Page Summary Contents For HITACHI 2SJ172 Silicon P-Channel MOS FET Data Sheet

Page 1 查询2SJ172供应商 2SJ172 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can ...

Page 2 2SJ172 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –60 Gate to source voltage VGSS ±20 Drain current ID –10 Drain peak current ID(pulse)* –40 Body to dra...

Page 3 2SJ172 ha nn el is si pa tio ch Power vs. Temperature Derating ra in ur re nt Maximum Safe Operation Area –100 PW = 10 m DC Operation (T s (1 shot) Operation in this area is limited by RDS(on) Ta = 25...

Page 4 2SJ172 ra in to ou rc at ur at io ol ta ge (V Drain to Source Saturation Voltage ta tic ra in to ou rc on Static Drain to Source on State ta te es is ta nc vs. Gate to Source Voltage (Ω Resistance vs....

Page 5 2SJ172 ev er se ec ov er im (n s) ra in to ou rc ol ta ge Typical Capacitance vs. Body to Drain Diode Reverse Drain to Source Voltage Recovery Time VGS = 0 f = 1 MHz di/dt = 50 A/µs, Ta = 25°C VGS = 0...

Page 6 2SJ172 Reverse Drain Current vs. or al iz ed ra ns ie nt he rm al Im pe da nc t) Source to Drain Voltage Pulse Test ev er se ra in ur re nt VGS = 0, 5 V –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltag...

Page 7 2SJ172 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduc...

Manual Details

Brand	Hitachi
Pages	7
File Size	37.19 KB
Published	June 03, 2026

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Frequently Asked Questions

What power applications is the 2SJ172 transistor suitable for?

It is specified for use in motor drive, DC-DC converter, power switch, and solenoid drive applications.

What are the key switching voltage requirements for this FET?

The device requires a 4 V gate drive but can be driven from a standard 5 V source.

How fast is the transistor's switching performance?

The datasheet lists the rise time (t_r) at 65 ns and the fall time (t_f) at 105 ns.

What are the general operational limits regarding current and heat?

It has a maximum drain current of -10 A, and its channel dissipation is rated up to 40 W.