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HITACHI 2SJ160, 2SJ161, 2SJ162 Silicon P-Channel MOS FET Data Manual

Summary

These P-Channel MOS Field Effect Transistors (FETs) are designed for demanding power amplification applications, especially in audio circuits. This detailed technical document provides essential information covering absolute maximum ratings, full electrical characteristics, safe operating area curves, and switching timing diagrams. It is an indispensable resource for electronic design engineers who require reliable components featuring excellent frequency response and high-speed switching capability in their power designs.

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Page 1 Text Content

查询2SJ160供应商

2SJ160, 2SJ161, 2SJ162 Silicon P-Channel MOS FET

Application

Low frequency power amplifier

Complementary pair with 2SK1056, 2SK1057 and 2SK1058

Features

• Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes • Suitable for audio power amplifier

Page Summary Contents For HITACHI 2SJ160, 2SJ161, 2SJ162 Silicon P-Channel MOS FET Data Manual

Page 1 查询2SJ160供应商 2SJ160, 2SJ161, 2SJ162 Silicon P-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Features • Good frequency characteristic • H...
Page 2 2SJ160, 2SJ161, 2SJ162 Outline TO-3P 1. Gate 2. Source (Flange) 3. Drain Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage 2SJ160 VDSX –120 2SJ161 –140 2SJ162 –160 ...
Page 3 2SJ160, 2SJ161, 2SJ162 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source 2SJ160 V(BR)DSX –120 ID = –10 m A , VGS = 10 V breakdown voltage 2SJ161 –140 ...
Page 4 2SJ160, 2SJ161, 2SJ162 ra in ur re nt ha nn el is si pa tio ch Power vs. Temperature Derating Maximum Safe Operation Area Ta = 25°C –10 ID max (Continuous) –9 (–14.3 V, PW = 100 ms (1 Shot) PW = 10 ms...
Page 5 2SJ160, 2SJ161, 2SJ162 In pu t C ap ac ita nc is p F ra in to ou rc at ur at io ol ta ge sa t) Drain to Source Saturation Voltage Drain to Source Voltage vs. vs. Drain Current Gate to Source Voltage V...
Page 6 2SJ160, 2SJ161, 2SJ162 Switching Time vs. Drain Current toff50 itc hi ng im ns n, ff Drain Current ID (A) Switching Time Test Circuit Waveforms Output Input Input ton toff PW = 50 µs duty ratio 50 Ω =...
Page 7 Unit: mm 1.4 Max 2.0 Hitachi Code TO-3P JEDEC EIAJ Conforms Weight (reference value) 5.0 g
Page 8 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained i...