HITACHI 2SJ247 Silicon P-Channel MOS FET Data Sheet

Summary

This P-Channel MOS FET is engineered for high-speed precision power switching, making it ideal for building efficient DC-DC converters and switching regulator circuits. Featuring low on-resistance and minimal drive current, it ensures reliable performance in demanding power management applications. This technical manual provides comprehensive electrical characteristics, detailed operational limits, and extensive graphs required by engineers and designers integrating the FET into their power electronic systems.

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查询2SJ247供应商

2SJ247 Silicon P-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter

Outline

TO-220AB

1. Gate 2. Drain (Flange) 3. Source

Page Summary Contents For HITACHI 2SJ247 Silicon P-Channel MOS FET Data Sheet

Page 1 查询2SJ247供应商 2SJ247 Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5...

Page 2 2SJ247 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –100 Gate to source voltage VGSS ±20 Drain current ID –8 Drain peak current ID(pulse)* –32 Body to dra...

Page 3 2SJ247 ha nn el is si pa tio ch ra in ur re nt Maximum Safe Operation Area Power vs. Temperature Derating –3 s (1 Shot) 100 sµPW 1 m –1 DC Operation Operation in (Tc = 25°C) –0.3 this area is limited ...

Page 4 2SJ247 ra in to ou rc at ur at io ol ta ge on ta tic ra in to ou rc on Drain to Source Saturation Voltage ta te es es ta nc on vs. Gate to Source Voltage Static Drain to Source on State –5 Resistance ...

Page 5 2SJ247 ev er se ec ov er im rr ns ra in to ou rc ol ta ge (V Body-Drain Diode Reverse Typical Capacitance Recovery Time vs. Drain-Source Voltage V = 0, f = 1 MHz GS di/dt = 50 A/ s V = 0 GS Crss Rever...

Page 6 2SJ247 Reverse Drain Current vs. or al iz ed ra ns ie nt he rm al Im pe da nc t) Source to Drain Voltage Pulse Test –16 ev er se ra in ur re nt V = 0 V, 5 VGS –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain ...

Page 7 Unit: mm 11.5 MAX 2.7 MAX 1.5 MAX Hitachi Code TO-220AB JEDEC Conforms EIAJ Conforms Weight (reference value) 1.8 g

Page 8 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained i...

Manual Details

Brand	Hitachi
Pages	8
File Size	43.21 KB
Published	June 03, 2026

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Frequently Asked Questions

What is the maximum typical dissipation power of this FET when Ta = 25°C?

The channel dissipation Pch* at 25°C is rated at up to 40 W.

Is 2SJ247 suitable for switching regulators or DC-DC converters?

Yes, the device features make it suitable for use in switching regulators and DC-DC converters.

How low can the on-resistance be at a given voltage?

The static drain to source on state resistance (R(on)) is typically 0.3 Ohms when I = –4 A and V = –10 V.

What is the recommended method for limiting power over time?

When operating in a pulse test scenario, consider the Normalized Transient Thermal Impedance vs. Pulse Width graph to ensure safe operation (PW).