HITACHI 2SJ175 Silicon P-Channel MOS FET Data Sheet
Summary
A high-performance P-Channel MOS FET, the 2SJ175 is engineered for reliable, high-speed power switching applications, including motor drives, DC-DC converters, and solenoid systems. This technical manual serves as a comprehensive guide for circuit designers, detailing absolute maximum ratings, full electrical characteristics (such as low on-resistance values), transient thermal models, and power derating curves to ensure optimal system integration and reliability.
Page 1 Text Content
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2SJ175 Silicon P-Channel MOS FET
November 1996
Application High speed power switching
Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-220FM
1. Gate 2. Drain 3. Source
Page Summary Contents For HITACHI 2SJ175 Silicon P-Channel MOS FET Data Sheet
Manual Details
| Brand | Hitachi |
|---|---|
| Pages | 5 |
| File Size | 27.68 KB |
| Published | June 03, 2026 |
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Frequently Asked Questions
What is the maximum channel dissipation rating for this FET?
The maximum channel dissipation ($P_{ch}^*$) rating listed is 25 W.
What specific applications are suitable for using this device?
It is suggested for motor drive, DC-DC converter, power switch, and solenoid drive circuits.
Are there constraints if I plan to use this product in medical devices?
No. Hitachi’s products are not authorized for MEDICAL APPLICATIONS without the written consent of an appropriate officer.