Motorola MPS4125 MPS4126 Data Handbook/Manual

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SEMICONDUCTOR TECHNICAL DATA by MPS4125/D

PNP Silicon

COLLECTOR

EMITTER

MAXIMUM RATINGS

Rating Symbol MPS4125 MPS4126 Unit

CASE 29–04, STYLE 1

Collector–Emitter Voltage VCE –30 –25 Vdc

TO–92 (TO–226AA)

Collector–Base Voltage VCB –10 –25 Vdc Emitter–Base Voltage VEB –4.0 Vdc Collector Current — Continuous IC –200 m Adc Total Power Dissipation @ TA = 25°C PD m W Derate above 25°C 5.0 m W/°C Total Power Dissipation @ TC = 25°C PD 1.5 Derate above 25°C m W/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient RJA °C/W Thermal Resistance, Junction to Case RJC 83.3 °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage MPS4125 V(BR)CEO –30 Vdc (IC = –1.0 m A, IB = 0) MPS4126 –25 Collector–Base Breakdown Voltage MPS4125 V(BR)CBO –30 Vdc

(IC = –10
A, IE = 0) MPS4126 –25

Emitter–Base Breakdown Voltage (IC = 0, IE = –10
A) V(BR)EBO –4.0 Vdc

Collector Cutoff Current (VCB = –20 V, IE = 0) ICBO –50 n Adc Emitter Cutoff Current (VEB = –3.0 V, IC = 0) IEBO –50 n Adc

REV 1

1Motorola Small–Signal Transistors, FETs and Diodes Device Data

 Motorola, Inc. 1996