Motorola Semiconductor MMSF4205 Data Handbook

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SEMICONDUCTOR TECHNICAL DATA by MMSF4205/D

Medium Power Surface Mount Products

Motorola Preferred Device

Mini MOS devices are an advanced series of power MOSFETs

SINGLE TMOS

which utilize Motorola’s High Cell Density HDTMOS process. These

POWER MOSFET

miniature surface mount MOSFETs feature ultra low RDS(on) and true

10 AMPERES

logic level performance. They are capable of withstanding high energy in

20 VOLTS

the avalanche and commutation modes and the drain–to–source diode

RDS(on) = 14 m

has a very low reverse recovery time. Mini MOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched

CASE 751–06, Style 12

and offer additional safety margin against unexpected voltage transients.

Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive — Can Be Driven by Logic ICs Miniature SO–8 Surface Mount Package — Saves Board Space Diode Is Characterized for Use In Bridge Circuits

SOURCE DRAIN

Diode Exhibits High Speed, With Soft Recovery

SOURCE DRAIN

IDSS Specified at Elevated Temperature

SOURCE DRAIN

Mounting Information for SO–8 Package Provided

GATE DRAIN

Avalanche Energy Specified

TOP VIEW

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Negative sign for P–Channel devices omitted for clarity

Rating Symbol Max Unit

Drain–to–Source Voltage VDSS Drain–to–Gate Voltage (RGS = 1.0 MΩ) VDGR Gate–to–Source Voltage — Continuous VGS 1 inch SQ. Thermal Resistance — Junction to Ambient RTHJA °C/W

FR–4 or G–10 PCB Total Power Dissipation @ TA = 25°C PD 2.5 Watts

Linear Derating Factor m W/°C

Drain Current @ TA = 25°C ID 10 seconds Continuous @ TA = 70°C ID 8.0 Pulsed Drain Current (1) IDM

Minimum Thermal Resistance — Junction to Ambient RTHJA °C/W

FR–4 or G–10 PCB Total Power Dissipation @ TA = 25°C PD 1.6 Watts

Linear Derating Factor 12.5 m W/°C

Drain Current @ TA = 25°C ID 8.8 10 seconds Continuous @ TA = 70°C ID 6.4 Pulsed Drain Current (1) IDM

Operating and Storage Temperature Range TJ, Tstg 55 to 150 °C Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C EAS m J (VDD = 20 Vdc, VGS = 4.5 Vdc, Peak IL = 5.0 Apk, L = 40 m H, RG = 25
) (1) Repetitive rating; pulse width limited by maximum junction temperature. DEVICE MARKING ORDERING INFORMATION

Device Reel Size Tape Width Quantity

MMSF4205R2 13″ 12 mm embossed tape 2500 units

HDTMOS and Mini MOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Preferred devices are Motorola recommended choices for future use and best overall value. This document contains information on a new product. Specifications and information herein are subject to change without notice.

1Motorola TMOS Power MOSFET Transistor Device Data

 Motorola, Inc. 1999