Motorola Semiconductor MMDF2N02E Data Handbook

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SEMICONDUCTOR TECHNICAL DATA by MMDF2N02E/D

Medium Power Surface Mount Products

DUAL TMOS MOSFET

Mini MOS devices are an advanced series of power MOSFETs

3.6 AMPERES

which utilize Motorola’s TMOS process. These miniature surface

25 VOLTS

mount MOSFETs feature ultra low RDS(on) and true logic level

RDS(on) = 0.1 OHM

performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a low reverse recovery time. Mini MOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape CASE 751–05, Style 11 drives. The avalanche energy is specified to eliminate the SO–8 guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive — Can Be Driven by Logic ICs

Source–1 Drain–1

Miniature SO–8 Surface Mount Package — Saves Board Space

Gate–1 Drain–1

Diode Is Characterized for Use In Bridge Circuits

IDSS Specified at Elevated Temperatures Source–2 Drain–2

Avalanche Energy Specified Gate–2 Drain–2 Mounting Information for SO–8 Package Provided

Top View

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Drain–to–Source Voltage VDSS Vdc Gate–to–Source Voltage — Continuous VGS Vdc Drain Current — Continuous @ TA = 25°C ID 3.6 Adc Drain Current — Continuous @ TA = 100°C ID 2.5

Drain Current — Single Pulse (tp ≤ 10 µs) IDM Apk

Total Power Dissipation @ TA = 25°C (1) PD 2.0 Operating and Storage Temperature Range TJ, Tstg –55 to 150 °C Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C EAS m J (VDD = 20 Vdc, VGS = 10 Vdc, Peak IL = 9.0 Apk, L = 6.0 m H, RG = 25 Ω) Thermal Resistance, Junction to Ambient (1) RθJA 62.5 °C/W Maximum Lead Temperature for Soldering Purposes, 0.0625″ from case for 10 seconds TL °C DEVICE MARKING F2N02 (1) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max.

ORDERING INFORMATION

Device Reel Size Tape Width Quantity MMDF2N02ER2 13″ 12 mm embossed tape Designer’s Data for “Worst Case” Conditions The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves representing boundaries on device characteristics are given to facilitate “worst case” design. Designer’s, E–FET and Mini MOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company.

REV 5

1Motorola TMOS Power MOSFET Transistor Device Data

 Motorola, Inc. 1996