Motorola Semiconductor BF959 Data Handbook/Manual

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SEMICONDUCTOR TECHNICAL DATA by BF959/D

NPN Silicon

COLLECTOR

EMITTER

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage VCEO Vdc Collector–Base Voltage VCBO Vdc

CASE 29–04, STYLE 21

Emitter–Base Voltage VEBO 3.0 Vdc TO–92 (TO–226AA) Collector Current — Continuous IC m Adc Total Device Dissipation @ TA = 25°C PD m W Derate above 25°C 5.0 m W/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watt Derate above 25°C m W/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient RJA °C/W Thermal Resistance, Junction to Case RJC 83.3 °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 1.0 m Adc, IB = 0) V(BR)CEO Vdc

Collector–Base Breakdown Voltage (IC = 10
Adc, IE = 0) V(BR)CBO Vdc Emitter–Base Breakdown Voltage (IE = 10
Adc, IC = 0) V(BR)EBO 3.0 Vdc

Collector Cutoff Current (VCB = 20 Vdc, IE = 0) ICBO n Adc ON CHARACTERISTICS DC Current Gain h FE (IC = 5.0 m Adc, VCE = 10 Vdc) (IC = 20 m Adc, VCE = 10 Vdc) Collector–Emitter Saturation Voltage (IC = 30 m Adc, IB = 2.0 m Adc) VCE(sat) 1.0 Vdc Base–Emitter Saturation Voltage (IC = 30 m Adc, IB = 2.0 m Adc) VBE(sat) 1.0 Vdc SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product f T MHz (IC = 20 m Adc, VCE = 10 Vdc, f = 100 MHz) (IC = 30 m Adc, VCE = 10 Vdc, f = 100 MHz) Common Emitter Feedback Capacitance Cre 0.65 p F (VCB = 10 Vdc, Pf = 0, f = 10 MHz) Noise Figure (IC = 4.0 m A, VCE = 10 V, RS = 50 Ω, f = 200 MHz) Nf 3.0 d B

1Motorola Small–Signal Transistors, FETs and Diodes Device Data

 Motorola, Inc. 1996