MOTOROLA MRFIC0913 Data Handbook

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SEMICONDUCTOR TECHNICAL DATA by MRFIC0913/D

This integrated circuit is intended for GSM class IV handsets. The device is

900 MHz

specified for 2.8 watts output power and 48% minimum power added efficiency

GSM CELLULAR

under GSM signal conditions at 4.8 Volt supply voltage. To achieve this superior

INTEGRATED POWER AMPLIFIER

performance, Motorola’s planar Ga As MESFET process is employed. The

Ga As MONOLITHIC

device is packaged in the PFP–16 Power Flat Package which gives excellent

INTEGRATED CIRCUIT

thermal performance through a solderable backside contact. Usable Frequency Range 800 to 1000 MHz Typical Output Power: 36.0 d Bm @ 5.8 Volts 35.0 d Bm @ 4.8 Volts 31.5 d Bm @ 3.6 Volts 48% Minimum Power Added Efficiency Low Parasitic, High Thermal Dissipation Package Order MRFIC0913R2 for Tape and Reel Option. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.

CASE 978–02

Device Marking = M0913

(PFP–16)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating Symbol Value Unit

Supply Voltage VD1, VD2 Vdc RF Input Power Pin d Bm Gate Voltage VSS –6 Vdc Ambient Operating Temperature TA –40 to +85 °C Storage Temperature Tstg –65 to +150 °C Thermal Resistance, Junction to Case RθJC °C/W

GND N/C

VD1 VD2

GND GND

VG2 RF OUT

VG1 RF OUT

RF IN VSS

N/C GND

Pin Connections and Functional Block Diagram

 Motorola, Inc. 1996

MRFIC0913MOTOROLA RF DEVICE DATA