Motorola MAC212FP Series Data Handbook Motorola MAC212AFP Series Data Handbook
Summary
These bidirectional silicon thyristors are critical solid-state devices designed for full-wave AC control applications, such as dimmers, motor controls, and HVAC power supplies. Featuring reliable switching capabilities up to 800V blocking and a rugged construction, they provide stable performance across varying loads. This technical manual offers engineers comprehensive data on electrical and thermal characteristics, including current ratings, differential resistance, and operating temperature ranges. Essential for professionals designing precise AC power management or advanced control systems.
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SEMICONDUCTOR TECHNICAL DATA by MAC212FP/D
Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, ISOLATED TRIACs motor controls, heating controls and power supplies; or wherever full-wave silicon THYRISTORS gate controlled solid-state devices are needed. Triac type thyristors switch from a 12 AMPERES RMS blocking to a conducting state for either polarity of applied anode voltage with positive 200 thru 800 VOLTS or negative gate triggering. Blocking Voltage to 800 Volts All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Gate Triggering Guaranteed in Three Modes (MAC212FP Series) or Four Modes (MAC212AFP Series)
MT2 MT1
CASE 221C-02 STYLE 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating Symbol Value Unit
Repetitive Peak Off-State Voltage(1) (TJ = –40 to +125°C, VDRM Volts 1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC212-4FP, MAC212A4FP MAC212-6FP, MAC212A6FP MAC212-8FP, MAC212A8FP MAC212-10FP, MAC212A10FP
On-State RMS Current (TC = +85°C) Full Cycle Sine Wave 50 to 60 Hz(2) IT(RMS) Amps Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +85°C) ITSM Amps preceded and followed by rated current Circuit Fusing (t = 8.3 ms) I2t A2s Peak Gate Power (TC = +85°C, Pulse Width = 10 µs) PGM Watts Average Gate Power (TC = +85°C, t = 8.3 ms) PG(AV) 0.35 Watt Peak Gate Current (TC = +85°C, Pulse Width = 10 µs) IGM Amps RMS Isolation Voltage (TA = 25°C, Relative Humidity 20%) V(ISO) Volts Operating Junction Temperature TJ –40 to +125 °C Storage Temperature Range Tstg –40 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 2.1 °C/W Thermal Resistance, Case to Sink RθCS 2.2 (typ) °C/W Thermal Resistance, Junction to Ambient RθJA °C/W 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.
1Motorola Thyristor Device Data
Motorola, Inc. 1995
Page Summary Contents For Motorola MAC212FP Series Data Handbook Motorola MAC212AFP Series Data Handbook
Manual Details
| Brand | Motorola |
|---|---|
| Pages | 6 |
| File Size | 114.01 KB |
| Published | May 27, 2026 |
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