MOTOROLA MPS4124 Data Sheet/Manual

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SEMICONDUCTOR TECHNICAL DATA by MPS4124/D

NPN Silicon

COLLECTOR

EMITTER

MAXIMUM RATINGS

Rating Symbol Value Unit CASE 29–04, STYLE 1

TO–92 (TO–226AA)

Collector–Emitter Voltage VCE Vdc Collector–Base Voltage VCB Vdc Emitter–Base Voltage VEB 5.0 Vdc Collector Current — Continuous IC m Adc Total Power Dissipation @ TA = 25°C PD m W Derate above 25°C 5.0 m W/°C Total Power Dissipation @ TC = 25°C PD 1.5 Derate above 25°C m W/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient RJA °C/W Thermal Resistance, Junction to Case RJC 83.3 °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CEO Vdc (IC = 1.0 m A, IB = 0) Collector–Base Breakdown Voltage V(BR)CBO Vdc (IC = 10
A, IE = 0) Emitter–Base Breakdown Voltage V(BR)EBO Vdc

(IC = 0, IE = 10
A) 5.0

Collector Cutoff Current ICBO n Adc (VCB = 20 V, IE = 0) Emitter Cutoff Current IEBO n Adc (VEB = 3.0 V, IC = 0)

(Replaces MPS4123/D)

1Motorola Small–Signal Transistors, FETs and Diodes Device Data

 Motorola, Inc. 1997