MOTOROLA MGW14N60ED Data Sheet

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SEMICONDUCTOR TECHNICAL DATA by MGW14N60ED/D

N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged

IGBT IN TO–247

with a soft recovery ultra–fast rectifier and uses an advanced

termination scheme to provide an enhanced and reliable high

voltage–blocking capability. Its new 600V IGBT technology is

600 VOLTS

specifically suited for applications requiring both a high tempera-

SHORT CIRCUIT RATED

ture short circuit capability and a low VCE(on). It also provides fast

ON–VOLTAGE

switching characteristics and results in efficient operation at high frequencies. Co–packaged IGBTs save space, reduce assembly time and cost. This new E–series introduces an energy efficient, ESD protected, and short circuit rugged device. Industry Standard TO–247 Package High Speed: Eoff = 60
J/A typical at 125°C High Voltage Short Circuit Capability – 10
s minimum at 125°C, 400V Low On–Voltage — 2.0V typical at 10A, 125°C Soft Recovery Free Wheeling Diode is included in the Package Robust High Voltage Termination ESD Protection Gate–Emitter Zener Diodes

CASE 340K–01 STYLE 4 TO–247 AE

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Collector–Emitter Voltage VCES Vdc Collector–Gate Voltage (RGE = 1.0 MΩ) VCGR Vdc Gate–Emitter Voltage — Continuous VGE Vdc Collector Current — Continuous @ TC = 25°C IC25 Adc Collector Current — Continuous @ TC = 90°C IC90

Collector Current — Repetitive Pulsed Current (1) ICM Apk

Total Power Dissipation @ TC = 25°C PD Watts Derate above 25°C 0.89 W/°C

Operating and Storage Junction Temperature Range TJ, Tstg –55 to 150 °C Short Circuit Withstand Time tsc (VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω)

Thermal Resistance — Junction to Case – IGBT RθJC 1.1 °C/W Thermal Resistance — Junction to Case – Diode RθJC 1.9 Thermal Resistance — Junction to Ambient RθJA Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds TL °C Mounting Torque, 6–32 or M3 screw 10 lbf
in (1.13 N
m) (1) Pulse width is limited by maximum junction temperature. Repetitive rating. Designer’s Data for “Worst Case” Conditions The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves representing boundaries on device characteristics are given to facilitate “worst case” design. Designer’s is a trademark of Motorola, Inc.

 torola, Inc. 1997 1Motorola IGBT Device Data