MOTOROLA MMSF3350 Data Sheet
Summary
Optimize your power systems with WaveFET® Power MOSFETs, designed for low voltage, high-speed switching applications requiring maximum efficiency. Ideal for developing compact, battery-powered devices such as dc–dc converters and portable electronics (e.g., computers, cellular phones). This technical manual provides comprehensive details on electrical characteristics, thermal ratings, and performance parameters (including low on-resistance and avalanche energy) to ensure robust design integration.
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SEMICONDUCTOR TECHNICAL DATA by MMSF3350/D
SINGLE TMOS
! ! POWER MOSFET
30 VOLTS Wave FET devices are an advanced series of power MOSFETs which utilize Motorola’s RDS(on) = 11 m
latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. Wave FET devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the CASE 751–06, Style 12 guesswork in designs where inductive loads are switched and offer additional safety margin SO–8 against unexpected voltage transients. Characterized Over a Wide Range of Power Ratings Ultralow RDS(on) Provides Higher Efficiency and Extends Battery Life in Portable Applications Source Drain Logic Level Gate Drive — Can Be Driven by Source
Drain
Logic ICs
Source Drain
Diode Is Characterized for Use In Bridge Circuits
Gate Drain
Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature TOP VIEW Avalanche Energy Specified Miniature SO–8 Surface Mount Package — Saves Board Space
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter Symbol Value Unit
Drain–to–Source Voltage VDSS Vdc Drain–to–Gate Voltage VDGR Vdc Gate–to–Source Voltage VGS ±20 Vdc Gate–to–Source Operating Voltage VGS ±16 Vdc Operating and Storage Temperature Range TJ, Tstg –55 to 150 °C Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C EAS m J (VDD = 25 Vdc, VGS = 10 Vdc, L = 20 m H, IL(pk) = 10 A, VDS = 30 Vdc)
DEVICE MARKING ORDERING INFORMATION
Device Reel Size Tape Width Quantity
MMSF3350R2 13″ 12 mm embossed tape 2500 units
This document contains information on a new product. Specifications and information herein are subject to change without notice. HDTMOS and Wave FET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company.
REV 1
1Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1998
Page Summary Contents For MOTOROLA MMSF3350 Data Sheet
Manual Details
| Brand | Motorola |
|---|---|
| Pages | 12 |
| File Size | 235.42 KB |
| Published | May 29, 2026 |
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Frequently Asked Questions
What types of applications is the WaveFET MOSFET designed for?
It is optimized for low voltage, high speed switching in areas where power efficiency is important, such as DC–DC converters and portable battery powered products.
Can this device be used in critical life support or surgical implant systems?
No. Motorola specifies that these components are not intended or authorized for use in any system supporting life or surgical implants.
Does the packaging save space on a circuit board?
Yes, it comes in a Miniature SO–8 Surface Mount Package which helps to save board space during mounting and design.