MOTOROLA MMSF5P02HD Data Sheet/Manual
Summary
MiniMOS Power MOSFETs are advanced surface-mount transistors designed for high efficiency in low voltage, high-speed switching systems. This technical manual provides comprehensive specifications, including maximum ratings, electrical characteristics, and application guidelines for mini-scale power management circuits. Ideal for engineers designing portable electronics and robust industrial controls—such as DC–DC converters and motor drives—this device ensures reliable performance by offering ultra-low on-resistance (R_DS(on)) and rapid switching capabilities.
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SEMICONDUCTOR TECHNICAL DATA by MMSF5P02HD/D
Medium Power Surface Mount Products
Motorola Preferred Device
SINGLE TMOS POWER MOSFET
Mini MOS devices are an advanced series of power MOSFETs
8.7 AMPERES
which utilize Motorola’s High Cell Density HDTMOS process. These
20 VOLTS
miniature surface mount MOSFETs feature ultra low RDS(on) and true
RDS(on) = 0.03 OHM
logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. Mini MOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as
CASE 751–05, Style 13
disk drives and tape drives. The avalanche energy is specified to SO–8 eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive — Can Be Driven by Logic ICs
Source Drain
Miniature SO–8 Surface Mount Package — Saves Board Space
Source Drain
Diode Is Characterized for Use In Bridge Circuits
Source Drain
Diode Exhibits High Speed, With Soft Recovery
Gate Drain
IDSS Specified at Elevated Temperature Avalanche Energy Specified
Top View
Mounting Information for SO–8 Package Provided
DEVICE MARKING ORDERING INFORMATION
Device Reel Size Tape Width Quantity
MMSF5P02HDR2 13″ 12 mm embossed tape 4000 units
Designer’s Data for “Worst Case” Conditions The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves representing boundaries on device characteristics are given to facilitate “worst case” design. HDTMOS and Mini MOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Preferred devices are Motorola recommended choices for future use and best overall value. REV 2
1Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1997
Page Summary Contents For MOTOROLA MMSF5P02HD Data Sheet/Manual
Manual Details
| Brand | Motorola |
|---|---|
| Pages | 12 |
| File Size | 204.68 KB |
| Published | May 31, 2026 |
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Frequently Asked Questions
What is the drain-to-source on-resistance (Rds(on))?
The typical Rds(on) is 22 mΩ at V = 4.5 Vdc, I = 6.4 Adc.
What are the operating temperature limits for this device?
The operating and storage temperature range is mentioned as -55 to 150 °C.
How much continuous drain current can it handle at room temperature (25°C)?
It can handle a continuous drain current of 8.7 A @ T = 25°C.
Are there specific mounting requirements for the SO–8 package?
Yes, mounting information for the SO–8 package is provided on the datasheet.