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Hitachi 2SK1095 Data Sheet

Summary

This N-Channel MOS FET power switch is engineered for high-speed performance, featuring low on-resistance and efficient switching characteristics. It provides robust solutions suitable for demanding applications such as motor drives, DC-DC converters, and solenoid control systems. The manual offers comprehensive technical details, including absolute maximum ratings, detailed electrical parameters (like channel dissipation and capacitance), and operational graphs necessary for reliable circuit design.

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查询2SK1095供应商

2SK1095 Silicon N-Channel MOS FET Application

TO–220FM

High speed power switching

Features Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source Suitable for motor drive, DC-DC converter,

1. Gate

power switch and solenoid drive

2. Drain 3. Source

Table 1 Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS ——————————————————————————————————————————— Gate to source voltage VGSS ±20 ——————————————————————————————————————————— Drain current ID ——————————————————————————————————————————— Drain peak current ID(pulse)* ——————————————————————————————————————————— Body to drain diode reverse drain current IDR ——————————————————————————————————————————— Channel dissipation Pch** ——————————————————————————————————————————— Channel temperature Tch °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— PW ≤ 10 µs, duty cycle ≤ 1 % Value at TC = 25 °C

Page Summary Contents For Hitachi 2SK1095 Data Sheet

Page 1 查询2SK1095供应商 2SK1095 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven f...
Page 2 2SK1095 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS ID = 10 m A, VGS = 0 ...
Page 3 2SK1095 ha nn el is si pa tio ch or al iz ed ra ns ie nt he rm al Im pe da nc t) s (1 Shot) C = 25°C) Power vs. Temperature Derating = 10 m Maximum Safe Operation Area DC Operation (T is th in ite 1 m...

Manual Details

Brand Hitachi
Pages 3
File Size 18.47 KB
Published June 05, 2026
16 views

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Frequently Asked Questions

What are the maximum working voltages for this FET?

The absolute maximum ratings support a Drain to source voltage (VDSS) of 60 V and Gate to source voltage (VGS) of ±20 V.

How fast does the device switch on and off?

The specified times are a turn-on delay of 15 ns, rise time of 130 ns, and fall time of 180 ns.

What commercial applications is this component suitable for?

It is suitable for motor drive, DC-DC converter, and gate power switch/solenoid drive applications.

What is the maximum continuous heat dissipation?

The channel dissipation (Pch) can be up to 30 W at room temperature.