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HITACHI 2SJ278 Data Sheet

Summary

Introducing the 2SJ278 Silicon P-Channel MOS FET, an optimal component for high-speed power switching applications including switching regulators and DC-DC converters. Designed with low on-resistance and minimal drive current, this device supports reliable operation from a 5V source. This comprehensive manual provides professional engineers and power electronics designers with full technical specifications, detailed electrical characteristics, and performance curves needed for highly efficient circuit design integration.

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Page 1 Text Content

查询2SJ278供应商

2SJ278 Silicon P-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter

Outline

1. Gate 2. Drain 3. Source 4. Drain

Page Summary Contents For HITACHI 2SJ278 Data Sheet

Page 1 查询2SJ278供应商 2SJ278 Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5...
Page 2 2SJ278 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –60 Gate to source voltage VGSS ±20 Drain current ID –1 Drain peak current ID(pulse)* –4 Body to drain...
Page 3 2SJ278 ra in ur re nt ha nn el is si pa tio ch (o th al um in am er am ic oa rd Power vs. Temperature Derating Maximum Safe Operation Area 2.0 –5 100 µs PW –1 = 10 m DC Operation s (1shot)Operation in...
Page 4 2SJ278 ra in to ou rc at ur at io ol ta ge ta tic ra in to ou rc on ta te es is ta nc Static Drain to Source on State Resistance (o n) Drain to Source Saturation Voltage vs. Gate to Source Voltage vs....
Page 5 2SJ278 ev er se ec ov er im rr ns ra in to ou rc ol ta ge Typical Capacitance vs. Body–Drain Diode Reverse Drain to Source Voltage Recovery Time di/dt = 50 A/µs V = 0, duty < 1 %GS V = 0 GS f = 1 M...
Page 6 2SJ278 Reverse Drain Current vs. Source to Drain Voltage Pulse Test ev er se ra in ur re nt (A V = 0, 5 VGS –0.4 –0.8 –1.2 –1.6 –2.0 Drain to Source Voltage V (V)DS Switching Time Test Circuit Wavefor...
Page 7 0. in 2. 0. 0. 4. ax Unit: mm 1.8 Max (1.5) 0.44 Max 0.53 Max 0.44 Max0.48 Max Hitachi Code UPAK JEDEC EIAJ Conforms Weight (reference value) 0.050 g
Page 8 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained i...