HITACHI 2SJ278 Data Sheet
Summary
Introducing the 2SJ278 Silicon P-Channel MOS FET, an optimal component for high-speed power switching applications including switching regulators and DC-DC converters. Designed with low on-resistance and minimal drive current, this device supports reliable operation from a 5V source. This comprehensive manual provides professional engineers and power electronics designers with full technical specifications, detailed electrical characteristics, and performance curves needed for highly efficient circuit design integration.
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2SJ278 Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter
Outline
1. Gate 2. Drain 3. Source 4. Drain
Page Summary Contents For HITACHI 2SJ278 Data Sheet
Manual Details
| Brand | Hitachi |
|---|---|
| Pages | 8 |
| File Size | 38.08 KB |
| Published | June 03, 2026 |
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