Hitachi 2SA1052 Data Sheet
Summary
The 2SA1052 is a high-performance Silicon PNP Epitaxial Bipolar Junction Transistor optimized for low-frequency amplifier applications. This technical guide provides thorough documentation essential for electronics designers, engineers, and circuit developers. Details covered include comprehensive absolute maximum ratings, critical electrical characteristics (such as breakdown voltages and collector saturation levels), and power dissipation curves. Use this manual to ensure precise component selection and reliable integration into amplification circuits.
Page 1 Text Content
查询2SA1052供应商
2SA1052 Silicon PNP Epitaxial
Application
Low frequency amplifier
Outline
1. Emitter 2. Base 3. Collector
Page Summary Contents For Hitachi 2SA1052 Data Sheet
Page 1
查询2SA1052供应商 2SA1052 Silicon PNP Epitaxial Application Low frequency amplifier Outline 1. Emitter 2. Base 3. Collector
Page 2
2SA1052 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –30 Collector to emitter voltage VCEO –30 Emitter to base voltage VEBO –5 Collector current IC –100...
Page 3
2SA1052 Maximum Collector Dissipation Curve ol le ct or ow er is si pa tio Ambient Temperature Ta (°C)
Page 4
Unit: mm Hitachi Code MPAK JEDEC EIAJ Conforms Weight (reference value) 0.011 g
Page 5
Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained i...
Manual Details
| Brand | Hitachi |
|---|---|
| Pages | 5 |
| File Size | 20.20 KB |
| Published | June 05, 2026 |
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