HITACHI 2SJ221 Data Sheet
Summary
The 2SJ221 is a high-speed Silicon P-Channel MOS FET designed for robust power switching in demanding applications such as motor drives, DC-DC converters, and solenoids. This comprehensive technical manual serves professional engineers and circuit designers by providing critical specifications, including absolute maximum ratings, detailed electrical characteristics (Rds(on), capacitances), and thermal performance graphs. Use this guide to ensure optimal selection and reliable high-power switching design implementation.
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2SJ221 Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-220AB
1. Gate 2. Drain (Flange) 3. Source
Page Summary Contents For HITACHI 2SJ221 Data Sheet
Manual Details
| Brand | Hitachi |
|---|---|
| Pages | 8 |
| File Size | 44.18 KB |
| Published | June 05, 2026 |
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Frequently Asked Questions
What is the maximum continuous power dissipation?
The maximum channel dissipation ($P_{ch*}$) for this FET is $75 ext{ W}$.
What are the absolute voltage limitations?
The Drain to source voltage rating ($V_{DSS}$) is $-100 ext{ V}$, and the Gate to source ($V_{GSS}$) is $-20 ext{ V}.
How fast can this FET switch, and what limits its operation?
It offers high-speed switching. However, operation in certain areas is limited by the on-resistance ($R_{DS(on)}$).