Hitachi 2SK1093 Data Sheet
Summary
This high-performance N-Channel MOS FET is engineered for robust, high-speed power switching applications, making it ideal for motor drives, DC-DC converters, and solenoid control systems. Designed with low on-resistance and fast transient response capability, the device efficiently manages medium-voltage power switching while accepting low gate drive voltages. This manual provides comprehensive technical data for professional engineers, detailing absolute maximum ratings, critical electrical specifications (including breakdown and resistance), and thermal impedance curves necessary for reliable circuit design and safe operation across various load conditions.
Page 1 Text Content
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2SK1093 Silicon N-Channel MOS FET Application
TO–220FM
High speed power switching
Features Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source Suitable for motor drive, DC-DC converter,
1. Gate
power switch and solenoid drive
2. Drain 3. Source
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS ——————————————————————————————————————————— Gate to source voltage VGSS ±20 ——————————————————————————————————————————— Drain current ID ——————————————————————————————————————————— Drain peak current ID(pulse)* ——————————————————————————————————————————— Body to drain diode reverse drain current IDR ——————————————————————————————————————————— Channel dissipation Pch** ——————————————————————————————————————————— Channel temperature Tch °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— PW ≤ 10 µs, duty cycle ≤ 1 % Value at TC = 25 °C
Page Summary Contents For Hitachi 2SK1093 Data Sheet
Manual Details
| Brand | Hitachi |
|---|---|
| Pages | 3 |
| File Size | 19.02 KB |
| Published | June 05, 2026 |
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