HITACHI 2SJ217 Data Sheet

Summary

The 2SJ217 is a robust P-Channel MOS FET engineered for demanding power switching applications requiring high efficiency and rapid response time. It excels in motor drives, DC-DC converters, and general power switch systems due to its low on-resistance and low drive current. This manual serves as the definitive guide, detailing comprehensive technical specifications, absolute maximum ratings, electrical characteristics (including detailed capacitance and switching times), thermal derating curves, and operational limits essential for professional circuit design and system integration.

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查询2SJ217供应商

2SJ217 Silicon P-Channel MOS FET

November 1996

Application

High speed power switching

Features

• Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Outline

TO-3P

1. Gate 2. Drain (Flange) 3. Source

Page Summary Contents For HITACHI 2SJ217 Data Sheet

Page 1 查询2SJ217供应商 2SJ217 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can ...

Page 2 2SJ217 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –60 Gate to source voltage VGSS ±20 Drain current ID –45 Drain peak current ID(pulse)* –180 Body to dr...

Page 3 2SJ217 ha nn el is si pa tio ch ra in ur re nt Power vs. Temperature Derating Maximum Safe Operation Area = 25°C) PW = 10 ms (1 shot) DC Operation (T –10 –5 Ta = 25°C –2 –1 –2 –5 –10 –20 –50 –100 Case...

Page 4 2SJ217 ra in to ou rc at ur at io ol ta ge (V ta tic ra in to ou rc on ta te es is ta nc Drain to Source Saturation Voltage Static Drain to Source on State (Ω on vs. Gate to Source Voltage Resistance ...

Page 5 2SJ217 ev er se ec ov er im ns ra in to ou rc ol ta ge Body to Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage di/dt = 50 A/µs, VGS = 0 Ta = 25°C 5,000 2,000 Ciss Pul...

Page 6 2SJ217 or al iz ed ra ns ie nt he rm al Im pe da nc t) Reverse Drain Current vs. Source to Drain Voltage Pulse Test –80 ev er se ra in ur re nt VGS = 0,5 V Source to Drain Voltage VSD (V) Normalized T...

Page 7 2SJ217 Switching Time Test Waveforms Switching Time Test Circuit Vin Monitor 10% Vout Monitor Vin VDD = 30 V Vout 10% td (on) tr td (off)

Page 8 Unit: mm 1.4 Max 2.0 Hitachi Code TO-3P JEDEC EIAJ Conforms Weight (reference value) 5.0 g

Page 9 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained i...

Manual Details

Brand	Hitachi
Pages	9
File Size	45.39 KB
Published	June 03, 2026

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Frequently Asked Questions

What is the maximum power dissipation for this device?

The average channel dissipation (Pch) is rated at 150 W.

Can I use this FET for DC-DC converters or motor drives?

Yes, it is suitable for motor drive, DC-DC converter, power switch, and solenoid drive applications.

What are the absolute voltage ratings for the gate to source connection?

The maximum Gate to source overvoltage (V GSS) rating is –20 V.

How does the device perform in high temperature environments?

It features a Maximum Safe Operation Area chart allowing calculation of operation limits based on case and ambient temperatures.

What is the typical On-State Resistance (R DS(on))?

At I = –20 A, V = –10 V*, the typical R DS(on) value is 0.042 Ohm.