Fairchild FQT13N06 Product Specification Sheet
Summary
This comprehensive technical manual details the FQT13N06 N-Channel Power MOSFET, an advanced field effect transistor designed for high-efficiency power conversion. Featuring low gate charge and minimal on-state resistance, this component is ideal for DC/DC converters and intricate power management systems in portable or battery-operated devices. The documentation provides essential specifications, including absolute maximum ratings, detailed electrical characteristics (switching times, capacitance), and thermal data, making it an indispensable resource for electrical engineers designing reliable low-voltage electronic products.
Page 1 Text Content
FQ T13N 06QFET
January 2002
FQT13N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 60V, RDS(on) = 0.14Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 5.8 n C) planar stripe, DMOS technology. Low Crss ( typical 15 p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching Improved dv/dt capability performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products.
SOT-223 FQT Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQT13N06 Units VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) 2.8
- Continuous (TC = 70°C) 2.24
IDM Drain Current - Pulsed (Note 1) 11.2 VGSS Gate-Source Voltage ± 25 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) 2.8 EAR Repetitive Avalanche Energy (Note 1) 0.21 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns
PD Power Dissipation (TC = 25°C) 2.1
- Derate above 25°C 0.017 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL °C
1/8" from case for 5 seconds
Thermal Characteristics Symbol Parameter Typ Max Units RθJA Thermal Resistance, Junction-to-Ambient * °C/W * When mounted on the minimum pad size recommended (PCB Mount)
©2002 Fairchild Semiconductor Corporation Rev. A2, January 2002
Page Summary Contents For Fairchild FQT13N06 Product Specification Sheet
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 704.09 KB |
| Published | July 12, 2026 |
Enter the captcha to get the download link:
Frequently Asked Questions
What is the device's standard drain-source on-resistance (R_DS(on))?
The typical R_DS(on) is 0.14 Ω, measured at V = 10V.
What temperature range can this MOSFET operate within?
The specified operating and storage temperature range is -55 to +150 °C.
Can I use this transistor for power management in portable electronics?
Yes, it is well suited for low voltage applications such as DC/DC converters and high efficiency switching for battery operated products.
What is the maximum pulsed drain current (I_D)?
The Pulsed Drain Current can reach 11.2 A.