Fairchild FDB8860 Product Specifications Sheet

Summary

This comprehensive datasheet details the FDB8860 N-Channel Logic Level PowerTrench MOSFET, engineered for high-efficiency switching applications. Optimized for performance in circuits like DC-DC Converters, this device features low on-resistance (R(DS)ON) and robust handling capabilities up to 80A. The manual provides detailed technical specifications, including electrical characteristics, thermal ratings, transient behavior, and timing diagrams for power electronics designers requiring reliable switching components.

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Fairchild FDB8860 Product Specifications Sheet - Page 1

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8860 N -C an el L ic L evel P er T ren ch

December 2010

FDB8860 N-Channel Logic Level Power Trench® MOSFET 30V, 80A, 2.6mΩ Features Applications RDS(ON) = 1.9mΩ (Typ), VGS = 5V, ID = 80A DC-DC Converters Qg(5) = 89n C (Typ), VGS = 5V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Ro HS Compliant

FDB8860 Rev A2

FDB8860 Rev.A2

Page Summary Contents For Fairchild FDB8860 Product Specifications Sheet

Page 1 8860 N -C an el L ic L evel P er T ren ch December 2010 FDB8860 N-Channel Logic Level Power Trench® MOSFET 30V, 80A, 2.6mΩ Features Applications RDS(ON) = 1.9mΩ (Typ), VGS = 5V, ID = 80A DC-DC Convert...

Page 2 8860 N -C an el L ic L evel P er T ren ch MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage VGS Gate to Source Voltage ±20 Drain Curre...

Page 3 8860 N -C an el L ic L evel P er T ren ch Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics t(on) Turn-On Time ns...

Page 4 8860 N -C an el L ic L evel P er T ren ch Typical Characteristics TJ = 25°C unless otherwise noted LI ZE ER (P PE EN (A PO ER IS SI PA TI LI PL IE IM PE JA VGS = 10V 1.0 CURRENT LIMITED BY PACKAGE VGS...

Page 5 8860 N -C an el L ic L evel P er T ren ch Typical Characteristics TJ = 25°C unless otherwise noted S( IN , D IN EN (A , D IN EN T( -R ES IS TA (m If R = 0 t AV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ...

Page 6 8860 N -C an el L ic L evel P er T ren ch Typical Characteristics TJ = 25°C unless otherwise noted PA IT (p F) LI ZE TE TH ES LD LT 1.4 1.10 VGS = VDS ID = 1m A 1.2 ID = 250μA TJ, JUNCTION TEMPERATURE...

Page 7 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive lis...

Manual Details

Brand	Fairchild
Pages	7
File Size	498.00 KB
Published	May 28, 2026

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Frequently Asked Questions

What are the maximum operating temperatures for this MOSFET?

The device supports an operating range of -55 to +175 degrees Celsius.

How does performance degrade with increasing case temperature?

Power dissipation should be derated above 25°C, and max continuous drain current decreases as case temperature rises (see Figures 1 & 2).

What is the on-resistance of the MOSFET at room temperature?

The typical Drain to Source On Resistance (RDS(ON)) is 2.6 mΩ when current is 80A and voltage is 4.5V.