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Fairchild FDC608PZ Product Specifications Sheet

Summary

The FDC608PZ is a high-performance, low $R_{DS(ON)}$ P-Channel 2.5V MOSFET designed for demanding battery power electronics applications. This technical manual provides comprehensive parameters on key performance indicators including electrical characteristics, switching times, and thermal handling for reliable circuit design. Ideal for engineers developing DC/DC converters, load switching circuits, and general power management solutions that require a compact SuperSOT–6 package, low gate charge, and maximum efficiency.

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FD 608PZ

June 2006

FDC608PZ P-Channel 2.5V Specified Power Trench® MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced

• –5.8 A, –20 V. RDS(ON) = 30 mΩ @ VGS = –4.5 V

using Fairchild Semiconductor’s advanced

RDS(ON) = 43 mΩ @ VGS = –2.5 V

Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain

• Low Gate Charge

low gate charge for superior switching performance.

• High performance trench technology for extremely

These devices are well suited for battery power

applications: load switching and power management, low RDS(ON)

battery power circuits, and DC/DC conversions.

• Super SOT TM –6 package: small footprint (72% smaller than standard SO–8) low profile (1mm thick).

Super SOT -6TM

Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ±12 V

Drain Current – Continuous (Note 1a) –5.8 ID – Pulsed –20 Maximum Power Dissipation (Note 1a) 1.6 PD (Note 1b) 0.8

TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .608Z FDC608PZ 7’’ 8mm 3000 units

©2006 Fairchild Semiconductor Corporation FDC608PZ Rev B (W)

Page Summary Contents For Fairchild FDC608PZ Product Specifications Sheet

Page 1 FD 608PZ June 2006 FDC608PZ P-Channel 2.5V Specified Power Trench® MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced • –5.8 A, –20 V. RDS(ON) = 30 mΩ @ VGS = –4.5 V ...
Page 2 FD 608PZ Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA...
Page 3 FD 608PZ S( LI ZE Typical Characteristics -I , D IN EN (A -I , D IN EN (A IN -S -R ES IS TA VGS = -4.5V -2.5V VGS= -2.0V -VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A) Figure 1. On-Region Ch...
Page 4 FD 608PZ -I , D IN EN (A Typical Characteristics -V TE -S VO LT (V r( t), LI ZE FF EC TI VE SI EN S, TH ER ES IS TA ID = -5.8A VDS = -5V f = 1 MHz -15V VGS = 0 V Qg, GATE CHARGE (n C) -VDS, DRAIN TO S...
Page 5 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT...

Manual Details

Brand Fairchild
Pages 5
File Size 144.27 KB
Published June 15, 2026
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Frequently Asked Questions

What types of applications are specialized for this MOSFET?

These devices are well suited for battery power applications, including load switching, power management circuits, and DC/DC conversions.

Can I use this device as a critical component in life support systems?

No, the product is not authorized for this use without the express written approval of Fairchild Semiconductor Corporation.

What does the SuperSOT-6 package provide over standard options?

The SuperSOT-6 offers a small footprint (72% smaller than SO-8) and a low profile (1mm thick).

How is the overall thermal resistance calculated for this component?

R is the sum of the junction-to-case ($ heta_{JC}$) and case-to-ambient ($ heta_{CA}$) resistance, which depends on board design.