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Fairchild FDB390N15A Product Specifications Sheet

Summary

The FDB390N15A is a high-performance N-Channel PowerTrench MOSFET designed for demanding power switching applications. This device features extremely low on-state resistance and lightning-fast switching speeds, optimized for efficiency and reliable operation. The accompanying datasheet provides comprehensive details covering maximum electrical ratings, dynamic parameters, detailed thermal characteristics, and performance curves. It is vital for engineers designing sophisticated power systems such as DC/DC converters, synchronous rectifiers for telecommunication PSUs, AC motor drives, battery chargers, and uninterruptible power supplies (UPS).

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July 2011

FDB390N15A N-Channel Power Trench® MOSFET 150V, 27A, 39mΩ

Features Description RDS(on) = 33.5mΩ ( Typ.)@ VGS = 10V, ID = 27A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance Power Trench process that has been

Fast Switching Speed

especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Low Gate Charge

High Performance Trench Technology for Extremely Low RDS(on)

Application

High Power and Current Handling Capability

DC to DC Converters

Ro HS Compliant

Synchronous Rectification for Telecommunication PSU

Battery Charger

AC Motor Drives and Uninterruptible Power Supplies

Off-line UPS

D2-PAK

MOSFET Maximum Ratings TC = 25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage VGSS Gate to Source Voltage ±20

- Continuous (TC = 25o C,Silicon Limited)

ID Drain Current

- Continuous (TC = 100o C,Silicon Limited)

IDM Drain Current - Pulsed (Note 1) EAS Single Pulsed Avalanche Energy (Note 2) m J dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns

(TC = 25o C)

PD Power Dissipation

- Derate above 25o C 0.5 W/o C

TJ, TSTG Operating and Storage Temperature Range -55 to +175

Maximum Lead Temperature for Soldering Purpose, o C

1/8” from Case for 5 Seconds

Thermal Characteristics Symbol Parameter Ratings Units RθJC Thermal Resistance, Junction to Case 2.0

RθJA Thermal Resistance, Junction to Ambient 62.5

©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FDB390N15A Rev. A2

Page Summary Contents For Fairchild FDB390N15A Product Specifications Sheet

Page 1 -C l P r T re July 2011 FDB390N15A N-Channel Power Trench® MOSFET 150V, 27A, 39mΩ Features Description RDS(on) = 33.5mΩ ( Typ.)@ VGS = 10V, ID = 27A This N-Channel MOSFET is produced using Fairchild S...
Page 2 -C l P r T re Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDB390N15A FDB390N15A D2-PAK 330mm 24mm Electrical Characteristics TC = 25o C unless ...
Page 3 -C l P r T re Typical Performance Char acteristics it ra in rr t[ ra in -S rc -R is ta Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS = 15.0V *Notes: 10.0V 1. VDS = 10V 8.0...
Page 4 -C l P r T re [N rm li Typical Performance Characteristics (Continued) [µ ra in rr [A ra in -S rc re lt Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temp...
Page 5 -C l P r T re Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve *Notes: Single pulse 1. ZθJC(t) = 2.0 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * Zθ...
Page 6 -C l P r T re Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDB390N15A Rev. A2 www.fairchildsemi.c...
Page 7 -C l P r T re Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver RG Same Type as DUT VDD dv/dt controlled by RG ISD controlled by pulse period Gate Pulse Width VGS D = Gate Pulse Period 10V...
Page 8 -C l P r T re Mechanical Dimensions D2PAK Dimensions in Millimeters FDB390N15A Rev. A2 www.fairchildsemi.com8
Page 9 -C l P r T re TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an ...