Fairchild FDC3535 Product Specifications Sheet
Summary
The FDC3535 is a high-performance P-Channel Power Trench MOSFET designed for demanding linear and switched power applications. Featuring exceptionally low on-resistance (Rds(on)) and superior switching speed, it is the ideal component for engineers developing reliable load switches or synchronous rectifiers. This manual provides comprehensive technical specifications, including maximum ratings, thorough electrical characteristics, and thermal data necessary for precise circuit design and optimal system performance.
Page 1 Text Content
FD 3535 P-C hannel Pow er Trench SFET
June 2010
FDC3535 P-Channel Power Trench® MOSFET -80 V, -2.1 A, 183 mΩ Features General Description Max r DS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A This P-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
Max r DS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A
been optimized for r DS(on), switching performance and High performance trench technology for extremely low r DS(on) ruggedness.
High power and current handling capability in a widely used surface mount package
Applications
Fast switching speed
Load Switch
100% UIL Tested
Synchronous Rectifier
Ro HS Compliant
DPin 1
Super SOTTM -6
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter Ratings Units
VDS Drain to Source Voltage -80 VGS Gate to Source Voltage ±20 Drain Current -Continuous (Note 1a) -2.1
-Pulsed -10 EAS Single Pulse Avalanche Energy (Note 3) m J Power Dissipation (Note 1a) 1.6
Power Dissipation (Note 1b) 0.7 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient (Note 1a)
Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity
.535 FDC3535 SSOT-6 7 ’’ 8 mm 3000 units
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FDC3535 Rev. C
Page Summary Contents For Fairchild FDC3535 Product Specifications Sheet
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 7 |
| File Size | 243.19 KB |
| Published | July 06, 2026 |
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Frequently Asked Questions
What is the maximum on-resistance (Rds(on))?
The datasheet shows a typical Rds(on) of 233 mΩ at V = -4.5 V and I = -1.9 A.
What power dissipation is rated for the device?
The maximum continuous rated power dissipation (Pd) is noted as 1.6 W.
Is this MOSFET suitable for synchronous rectifier applications?
Yes, the product supports use in applications such as Synchronous Rectifiers and Load Switches.
What are the operating temperature limits?
The junction temperature (Tj) range operates from -55 to +150 °C. The maximum storage temperature is also listed as 150 °C.