Fairchild FDD6778A Product Specifications Sheet

FD 6778A -C hannel Pow er Trench SFET

January 2009

FDD6778A N-Channel Power Trench® MOSFET 25 V, 14.0 mΩ Features General Description

Max r DS(on) = 14.0 mΩ at VGS = 10 V, ID = 10.0 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either

Max r DS(on) = 30.0 mΩ at VGS = 4.5 V, ID = 9.7 A

synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast

100% UIL tested

switching speed.

Ro HS Compliant

Applications Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture

TO-252D-PAK (TO-252)

MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol Parameter Ratings Units

VDS Drain to Source Voltage VGS Gate to Source Voltage ±20 Drain Current -Continuous (Package limited) TC = 25 °C 10 -Continuous (Silicon limited) TC = 25 °C

-Continuous TA = 25 °C (Note 1a) -Pulsed EAS Single Pulse Avalanche Energy (Note 3) m J Power Dissipation TC = 25 °C

Power Dissipation TA = 25 °C (Note 1a) 3.7

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 °C

Thermal Characteristics

RθJC Thermal Resistance, Junction to Case 6.2

RθJA Thermal Resistance, Junction to Ambient (Note 1a)

Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD6778A FDD6778A D-PAK (TO-252) 13 ’’ 12 mm 2500 units

©20 09 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FD D6778A Rev.C