Fairchild FQPF3N80 Product Specifications Sheet
Summary
The FQPF3N80 is a high-performance N-Channel MOSFET specialized for demanding switching applications up to 800V and 1.8A. Designed with advanced planar stripe DMOS technology, it offers superior efficiency via minimized on-state resistance and lightning-fast switching capabilities. This comprehensive datasheet is essential reference material for electrical engineers and hardware designers building high-efficiency switch mode power supplies. It provides detailed thermal, absolute maximum ratings, and dynamic characteristics required for accurate system prototyping and robust circuit design.
Page 1 Text Content
September 2000
QFETTM
FQPF3N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.8A, 800V, RDS(on) = 5.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 15 n C) planar stripe, DMOS technology. Low Crss ( typical 7.0 p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the
Improved dv/dt capability
avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
SD TO-220F
FQPF Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF3N80 Units VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) 1.8
- Continuous (TC = 100°C) 1.14
IDM Drain Current - Pulsed (Note 1) 7.2 VGSS Gate-Source Voltage ± 30 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) 1.8 EAR Repetitive Avalanche Energy (Note 1) 3.9 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C 0.31 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL °C
1/8" from case for 5 seconds
Thermal Characteristics Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case 3.2 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W
©2000 Fairchild Semiconductor International Rev. A, September 2000
Page Summary Contents For Fairchild FQPF3N80 Product Specifications Sheet
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 654.98 KB |
| Published | June 03, 2026 |
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Frequently Asked Questions
What is the continuous drain current at 25°C?
The continuous drain current (IC) at 25°C is rated at 1.8 A.
Does this device handle high energy pulses?
Yes, it features 100% avalanche tested performance and can withstand a single pulsed avalanche energy of 320 mJ.
What are the safe operating temperatures for the MOSFET?
The operating temperature range is -55°C to +150°C.
How does the power dissipation derate above 25°C?
Power dissipation must be derated by 0.31 W/°C above 25°C.