Fairchild FDD3680 Product Specifications Sheet

February 2001

FDD3680 100V N-Channel Power Trench MOSFET General Description Features This N-Channel MOSFET has been designed

• 25 A, 100 V. RDS(ON) = 46 mΩ @ VGS = 10 V

specifically to improve the overall efficiency of DC/DC

RDS(ON) = 51 mΩ @ VGS = 6 V

converters using either synchronous or conventional switching PWM controllers.

• Low gate charge (38 n C typical)

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable • Fast switching speed RDS(ON) specifications.

• High performance trench technology for extremely

The result is a MOSFET that is easy and safer to drive

low RDS(ON)

(even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

• High power and current handling capability.

TO-252

Absolute Maximum Ratings T A=25o C unless otherwise noted

Symbol Parameter Ratings Units VDSS Drain-Source Voltage VGSS Gate-Source Voltage ±20 ID Drain Current – Continuous (Note 1)

Drain Current – Pulsed

PD Maximum Power Dissipation (Note 1)

(Note 1a) 3.8 (Note 1b) 1.6

TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C

Thermal Characteristics

RθJC Thermal Resistance, Junction-to-Case (Note 1) 2.2 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) °C/W

Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD3680 FDD3680 13’’ 16mm 2500 units

2001 Fairchild Semiconductor Corporation FDD3680 Rev B1(W)