Fairchild FCPF400N60 Product Specifications Sheet
Summary
A high-performance N-Channel MOSFET featuring SuperFET II technology, engineered to deliver superior switching capability and outstanding low on-resistance for demanding power conversion circuits. This datasheet provides critical design parameters, including absolute maximum ratings, thermal resistance metrics, and detailed electrical characteristics—such as $R_{DS(on)}$ and gate charge ($Q_g$). It is ideally suited for system designers developing high-efficiency AC/DC power converters that require minimal conduction loss and reliable operation under various switching modes.
Page 1 Text Content
FC PF400N 60 N -C hannel SFET
March 2012
Super FET® II
FCPF400N60 600V N-Channel MOSFET Features Description 650V @TJ = 150°C Super FET®II is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge bal-
Max. RDS(on) = 400mΩ
ance mechanism for outstanding low on-resistance and lower Ultra low gate charge (typ. Qg = 28n C) gate charge performance.
Low effective output capacitance (typ. Coss.eff = 90p F) This advanced technology has been tailored to minimize con- duction loss, provide superior switching performance, and with-
100% avalanche tested
stand extreme dv/dt rate and higher avalanche energy. Consequently, Super FET®II is very suitable for various AC/DC power conversion in switching mode operation for system minia- turization and higher efficiency.
TO-220FG
Absolute Maximum Ratings TC = 25o C unless otherwise noted Symbol Parameter FCPF400N60 Units
VDSS Drain to Source Voltage
-DC ±20
VGSS Gate to Source Voltage
-AC (f>1HZ) ±30 -Continuous (TC = 25o C) 10*
ID Drain Current
-Continuous (TC = 100o C) 6.3*
IDM Drain Current - Pulsed (Note 1) 30* EAS Single Pulsed Avalanche Energy (Note 2) 211.6 m J IAR Avalanche Current (Note 1) 2.3 EAR Repetitive Avalanche Energy (Note 1) 1.06 m J Peak Diode Recovery dv/dt (Note 3)
dv/dt V/ns
MOSFET dv/dt 100
(TC = 25o C)
PD Power Dissipation
- Derate above 25o C 0.25 W/o C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 Maximum Lead Temperature for Soldering Purpose, o C
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics Symbol Parameter FCPF400N60 Units RθJC Thermal Resistance, Junction to Case 4
o C/WRθCS
Thermal Resistance, Case to Heat Sink (Typical) 0.5 RθJA Thermal Resistance, Junction to Ambient 62.5
©2012 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FCPF400N60 Rev. C2
Page Summary Contents For Fairchild FCPF400N60 Product Specifications Sheet
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 9 |
| File Size | 264.50 KB |
| Published | July 10, 2026 |
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Frequently Asked Questions
What is the maximum drain-to-source voltage for this MOSFET?
The device has a minimum Drain to Source Breakdown Voltage ($V_{DSS}$) of 600 V.
Is this FET suitable for high-frequency switching applications?
Yes, SuperFET II is optimized for superior switching performance and minimal conduction loss, making it ideal for AC/DC power conversion.
What are the operating temperature range limits?
The specified Operating Temperature Range (T) is from -55 to +150°C.
How is drain current limited during operation?
Drain current must be limited by the maximum junction temperature ($T_J$), which dictates thermal derating.
What are the turn-on and turn-off times?
The Turn-On Delay Time ($t_{d(on)}$) is 13-37 ns, and the Turn-Off Delay Time ($t_{d(off)}$) is 43-95 ns.