Fairchild FDB3860 Product Specification Sheet

FD 3860 N -C hannel Pow er Trench SFET

March 2009

FDB3860 N-Channel Power Trench® MOSFET 100 V, 30 A, 37 mΩ Features General Description Max r DS(on) = 37 mΩ at VGS = 10 V, ID = 5.9 A This N-Channel MOSFET is rugged gate version of Fairchild

Semiconductor‘s advanced Power Trench® process. This part is

High performance trench technology for extremely low r DS(on)

tailored for low r DS(on) and low Qg figure of merit, with avalanche 100% UIL tested ruggedness for a wide range of switching applications.

Ro HS Compliant Applications

DC-AC Conversion

Synchronous Rectifier

TO-263AB FDB Series

MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol Parameter Ratings Units

VDS Drain to Source Voltage VGS Gate to Source Voltage ±20 Drain Current -Continuous (Silicon limited) TC = 25 °C

ID 6.4 A -Continuous TA = 25 °C (Note 1a)

-Pulsed EAS Single Pulse Avalanche Energy (Note 3) m J Power Dissipation TC = 25 °C

Power Dissipation TA = 25 °C (Note 1a) 3.1

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics

RθJC Thermal Resistance, Junction to Case 1.75

RθJA Thermal Resistance, Junction to Ambient (Note 1a)

Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDB3860 FDB3860 TO-263AB 330 mm 24 mm 800 units

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