Fairchild FCP9N60N FCPF9N60NT Specification Sheet
Summary
This high-performance N-Channel MOSFET is a SupreMOS solution designed for demanding, efficient power switching in industrial applications. Ideal for server/telecom power, PFC circuits, ATX power supplies, and FPD TV systems, it offers superior efficiency, low resistance, and 600V/9A ratings. The accompanying technical manual covers every detail, including comprehensive electrical, thermal, and dynamic performance data required for reliable circuit design and integration.
Page 1 Text Content
FC P9N 60N / FC PF9N 60N T N -C hannel M SFET
August 2009 Supre MOSTM
FCP9N60N / FCPF9N60NT
N-Channel MOSFET 600V, 9A, 0.385Ω Features Description RDS(on) = 0.33Ω ( Typ.)@ VGS = 10V, ID = 4.5A The Supre MOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
Ultra low gate charge ( Typ. Qg = 22n C)
process that differentiates it from preceding multi-epi based Low effective output capacitance technologies. By utilizing this advanced technology and precise process control, Supre MOS provides world class Rsp, superior
100% avalanche tested switching performance and ruggedness.
This Supre MOS MOSFET fits the industry’s AC-DC SMPS
Ro HS compliant
requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
TO-220 TO-220F
S DG D S
FCP Series FCPF Series G
MOSFET Maximum Ratings TC = 25o C unless otherwise noted* Symbol Parameter FCP9N60N FCPF9N60NT Units VDSS Drain to Source Voltage
VGSS Gate to Source Voltage ±30
-Continuous (TC = 25o C) 9.0 9.0*
ID Drain Current
-Continuous (TC = 100o C) 5.7 5.7*
IDM Drain Current - Pulsed (Note 1) 27* EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current 3 EAR Repetitive Avalanche Energy 0.83 m J MOSFET dv/dt Ruggedness V/ns
dv/dt
Peak Diode Recovery dv/dt (Note 3) V/ns
(TC = 25o C) 83.3 29.8
PD Power Dissipation
- Derate above 25o C 0.67 0.24 W/o C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 Maximum Lead Temperature for Soldering Purpose, o C
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics Symbol Parameter FCP9N60N FCPF9N60NT Units
RθJC Thermal Resistance, Junction to Case 1.5 4.2
o C/WRθCS
Thermal Resistance, Case to Heat Sink (Typical) 0.5 0.5
RθJA Thermal Resistance, Junction to Ambient 62.5 62.5
©2009 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FCP9N60N / FCPF9N60NT Rev. A
Page Summary Contents For Fairchild FCP9N60N FCPF9N60NT Specification Sheet
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 10 |
| File Size | 906.26 KB |
| Published | July 12, 2026 |
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Frequently Asked Questions
What applications are compatible with the SupreMOS MOSFET technology?
It is suitable for AC-DC SMPS, PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
How does the device perform under high switching speeds?
It provides 100% avalanche tested switching performance and ruggedness with a maximum dv/dt of 20 V/ns (Note 3).
What are the limits for continuous drain current at room temperature (T=25C)?
The FCP9N60N can handle 9.0 A, while the FCPF9N60NT is limited to 9.0A only when cooled by using a heatsink.
What is the typical static drain-to-source on resistance (Rds(on))?
The typical Rds(on) is 0.33Ω, or a maximum specification of 0.385 Ω.