Fairchild FQAF12P20 Specifications
Summary
A high-performance P-Channel MOSFET designed for demanding power switching applications. Featuring advanced DMOS technology, this component offers superior efficiency due to low on-state resistance and extremely fast switching capabilities. The manual provides comprehensive technical specifications, including absolute maximum ratings, detailed electrical characteristics (On/Off/Dynamic), and thermal performance guidelines. It is ideal for electronics designers building high-efficiency DC/DC converters or systems requiring robust handling of avalanche and commutation modes.
Page 1 Text Content
May 2000
QFETTM
FQAF12P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -11.5A, -200V, RDS(on) = 0.47Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 31 n C) planar stripe, DMOS technology. Low Crss ( typical 30 p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the
Improved dv/dt capability
avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.
TO-3PF
FQAF Series G
Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQAF12P20 Units VDSS Drain-Source Voltage -200 ID Drain Current - Continuous (TC = 25°C) -8.6
- Continuous (TC = 100°C) -5.4
IDM Drain Current - Pulsed (Note 1) -34.4 VGSS Gate-Source Voltage ± 30 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) -8.6 EAR Repetitive Avalanche Energy (Note 1) 7.0 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C 0.56 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL °C
1/8" from case for 5 seconds
Thermal Characteristics Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case 1.79 °C/W RθJA Thermal Resistance, Junction-to-Ambient °C/W
©2000 Fairchild Semiconductor International Rev. B, May 2000
Page Summary Contents For Fairchild FQAF12P20 Specifications
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 629.81 KB |
| Published | June 05, 2026 |
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Frequently Asked Questions
What is the continuous drain current rating at different temperatures?
The continuous drain current ($I_D$) is -8.6 A at 25°C, but drops to -5.4 A at 100°C.
What is the operational temperature range for this device?
The operating and storage temperature range of the FQAF12P20 MOSFET is specified as -55 to +150 °C.
Can I use this MOSFET in life support equipment?
No, Fairchild’s products are not authorized for use as critical components in life support devices or systems without express written approval.
How is power dissipation calculated above 25°C?
Above 25°C, the device must be derated using a factor of 0.56 W/°C.