Fairchild FDG311N Specifications Manual

February 2000

FDG311N N-Channel 2.5V Specified Power Trench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild

1.9 A, 20 V. RDS(ON) = 0.115 Ω @ VGS = 4.5 V

Semiconductor's advanced Power Trench process that

has been especially tailored to minimize the on-state RDS(ON) = 0.150 Ω @ VGS = 2.5 V.

resistance and yet maintain low gate charge for superior switching performance. These devices are Low gate charge (3n C typical). well suited for portable electronics applications.

High performance trench technology for extremely low

Applications

RDS(ON).

Load switch

Compact industry standard SC70-6 surface mount

Power management

package.

DC/DC converter

SC70-6

Absolute Maximum Ratings TA = 25 C unless otherwise noted

Symbol Parameter Ratings Units VDSS Drain-Source Voltage

VGSS Gate-Source Voltage ±8

ID Drain Current - Continuous (Note 1a) 1.9

- Pulsed

Power Dissipation for Single Operation (Note 1a) 0.75 WPD (Note 1b) 0.48

TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics

RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) °C/W

Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity

.11 FDG311N 8mm 3000 units

2000 Fairchild Semiconductor Corporation FDG311N Rev. D