Fairchild FDD6N20 Specifications Manual
Summary
This high-performance N-Channel MOSFET is designed using advanced planar DMOS technology to ensure superior switching efficiency and reliability. The device features exceptionally low on-state resistance, fast transitions, and robust avalanche energy capability, making it ideal for demanding applications such as active power factor correction circuits and switched mode power supplies. This manual provides complete technical specifications, detailing maximum ratings, electrical performance curves, thermal characteristics, and detailed switching parameters required for professional design implementation.
Page 1 Text Content
FD 6N 20 / FD 6N 20 N -C hannel M SFET
May 2007
Uni FETTM
FDD6N20 / FDU6N20
N-Channel MOSFET 200V, 4.5A, 0.8Ω Features Description RDS(on) = 0.6Ω ( Typ. )@ VGS = 10V, ID = 2.3A These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
Low gate charge ( Typ. 4.7n C )
stripe, DMOS technology.
Low Crss ( Typ. 6.3p F )
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
Fast switching
performance, and withstand high energy pulse in the avalanche
100% avalanche tested and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
Improved dv/dt capability
correction.
Ro HS compliant
I-PAK
D-PAK
FDD Series FDU Series
MOSFET Maximum Ratings TC = 25o C unless otherwise noted* Symbol Parameter Ratings Units
VDSS Drain to Source Voltage VGSS Gate to Source Voltage ±30
-Continuous (TC = 25o C) 4.5
ID Drain Current
-Continuous (TC = 100o C) 2.7
IDM Drain Current - Pulsed (Note 1) EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) 4.5 EAR Repetitive Avalanche Energy (Note 1) 4.0 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
(TC = 25o C)
PD Power Dissipation
- Derate above 25o C 0.32 W/o C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 Maximum Lead Temperature for Soldering Purpose, o C
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics Symbol Parameter Ratings Units RθJC Thermal Resistance, Junction to Case 3.1
RθJA Thermal Resistance, Junction to Ambient 110
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FDD6N20 / FDU6N20 Rev. A
Page Summary Contents For Fairchild FDD6N20 Specifications Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 9 |
| File Size | 376.17 KB |
| Published | May 20, 2026 |
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Frequently Asked Questions
What is the typical on-state resistance (Rds(on))?
The typical static drain to source on resistance is 0.6 Ω.
How high can the device handle continuously at room temperature?
The continuous drain current rating is 4.5 A at 25°C.
What types of applications are these MOSFETs best suited for?
They are well suited for high-efficiency switched mode power supplies and active power factor correction.
Are there restrictions on using this product in life support devices?
The products require express written approval from Fairchild Semiconductor Corporation for use as critical components in life support systems.