Fairchild FCB11N60 Specifications Manual

FC 11N 60 600V N -C hannel M SFET

December 2008

Super FET TM

FCB11N60 600V N-Channel MOSFET Features Description 650V @TJ = 150°C Super FETTM is, Fairchild’s proprietary, new generation of high

voltage MOSFET family that is utilizing an advanced charge

Typ. RDS(on) = 0.32Ω

balance mechanism for outstanding low on-resistance and

Ultra low gate charge (typ. Qg = 40n C) lower gate charge performance.

Low effective output capacitance (typ. Coss.eff = 95p F) This advanced technology has been tailored to minimize con-

duction loss, provide superior switching performance, and with-

100% avalanche tested

stand extreme dv/dt rate and higher avalanche energy.

Ro HS Compliant Consequently, Super FET is very suitable for various AC/DC

power conversion in switching mode operation for system min- iaturization and higher efficiency.

Absolute Maximum Ratings Symbol Parameter FCB11N60 Unit VDSS Drain-Source Voltage

ID Drain Current - Continuous (TC = 25°C)

- Continuous (TC = 100°C)

IDM Drain Current - Pulsed (Note 1)

VGSS Gate-Source voltage ± 30

EAS Single Pulsed Avalanche Energy (Note 2) m J

IAR Avalanche Current (Note 1)

EAR Repetitive Avalanche Energy (Note 1) 12.5 m J

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PD Power Dissipation (TC = 25°C)

- Derate above 25°C 1.0 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TL Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Thermal Characteristics Symbol Parameter FCB11N60 Unit RθJC Thermal Resistance, Junction-to-Case 1.0 °C/W

RθJA* Thermal Resistance, Junction-to-Ambient* °C/W

RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W

* When mounted on the minimum pad size recommended (PCB Mount)

©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FCB11N60 Rev. A3